JANHCB2N5416-Transistor-Die High-Performance Amplifier Transistor Die by JANHCB

  • This transistor die controls current flow efficiently, enabling precise switching and amplification in electronic circuits.
  • Its electrical characteristics support stable operation, ensuring consistent performance under varying loads.
  • The compact die format allows integration into small or densely populated printed circuit boards, saving valuable space.
  • Ideal for signal processing tasks in communication devices, it improves response times and circuit reliability.
  • Manufactured to meet strict quality standards, this component provides dependable long-term operation in demanding environments.
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产品上方询盘

JANHCB2N5416-Transistor-Die Overview

The JANHCB2N5416-Transistor-Die is a high-performance bipolar junction transistor die designed for integration into semiconductor assemblies requiring robust switching and amplification capabilities. Engineered for industrial and electronic applications, this transistor die offers reliable electrical characteristics and thermal stability that support precision circuit functionality. Its compact die format enables efficient integration into multi-chip modules or custom packaging solutions. Ideal for engineers and sourcing specialists, this device balances performance with manufacturability, ensuring dependable operation in demanding environments. For more information, visit IC Manufacturer.

JANHCB2N5416-Transistor-Die Key Features

  • High Current Gain: Provides effective amplification, enhancing signal strength in analog and switching circuits.
  • Low Saturation Voltage: Minimizes power loss during switching, improving overall energy efficiency in power management applications.
  • Thermal Stability: Ensures consistent performance across a wide temperature range, reducing failure rates and increasing reliability.
  • Compact Die Size: Facilitates integration into custom semiconductor packages and multi-chip modules, supporting miniaturized electronic designs.

JANHCB2N5416-Transistor-Die Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)100V
Collector Current (IC)8A
Gain Bandwidth Product (fT)15MHz
DC Current Gain (hFE)40-160??
Power Dissipation (PD)30W
Transition Frequency15MHz
Junction Temperature (TJ)150??C
Base-Emitter Voltage (VBE(on))1.2V

JANHCB2N5416-Transistor-Die Advantages vs Typical Alternatives

This transistor die excels over typical alternatives by offering a superior current gain range and higher power dissipation capability, enabling robust performance in power-sensitive applications. Its low saturation voltage reduces energy losses during switching, enhancing efficiency. Additionally, its thermal stability ensures reliable operation under elevated temperatures, making it well-suited for industrial electronics requiring consistent performance and longevity.

Typical Applications

  • Power Amplification Circuits: Utilized in audio and RF amplifiers where reliable current gain and thermal handling are critical for signal integrity and device longevity.
  • Switching Regulators: Supports efficient switching in DC-DC converters and power supply modules, improving overall energy management.
  • Motor Control Systems: Provides precise transistor switching required for controlling motors in industrial automation.
  • Signal Processing: Acts as a key component in analog signal amplification and conditioning circuits in instrumentation.

JANHCB2N5416-Transistor-Die Brand Info

The JANHCB2N5416-Transistor-Die is manufactured by a reputable semiconductor producer known for delivering reliable transistor dies optimized for industrial and commercial electronics. This product exemplifies the brand??s commitment to precision engineering and stringent quality control, ensuring that each transistor die meets rigorous performance standards. Widely adopted by engineers and product developers, this transistor die is a trusted choice for high-reliability applications requiring consistent electrical characteristics and robust thermal performance.

FAQ

What is the maximum collector current rating of the transistor die?

The maximum collector current rating for this transistor die is 8 amperes, which allows it to handle moderate power levels suitable for a range of amplification and switching applications.

How does the transistor die perform under high-temperature conditions?

The transistor die maintains thermal stability up to a junction temperature of 150??C, ensuring reliable operation and reduced risk of thermal-induced failure in demanding environments.

What is the significance of the gain bandwidth product in this transistor die?

The gain bandwidth product of 15 MHz indicates the frequency range over which the transistor can provide effective amplification, making it suitable for medium-frequency analog and switching applications.

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产品中间询盘

Can this transistor die be integrated into multi-chip modules?

Yes, its compact die size is designed to facilitate integration into multi-chip modules and custom semiconductor packages, supporting compact and efficient electronic system designs.

What applications benefit most from the low saturation voltage characteristic?

Applications that involve high-frequency switching and power management, such as switching regulators and motor controllers, benefit significantly from the low saturation voltage since it reduces power losses and improves overall efficiency.

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