JANHCB2N5004-Transistor-Die Overview
The JANHCB2N5004-Transistor-Die is a high-performance NPN bipolar junction transistor die designed for industrial and power switching applications. Engineered to deliver robust current gain and voltage handling capabilities, this transistor die supports efficient amplification and switching in demanding electronic circuits. Its compact die format enables bespoke integration within semiconductor packages or custom modules, providing flexibility for specialized designs. Manufactured with precision, it ensures consistent electrical characteristics, making it a reliable component for engineers focused on high-efficiency power management solutions. For detailed sourcing and additional technical resources, visit IC Manufacturer.
JANHCB2N5004-Transistor-Die Key Features
- High collector-emitter voltage rating: Enables operation in circuits requiring up to 400 V, ensuring robustness against voltage spikes.
- Substantial collector current capacity: Supports continuous currents up to 10 A, suitable for power amplification and switching tasks.
- Optimized DC current gain (hFE): Provides gain values up to 100, enhancing signal amplification efficiency.
- Low saturation voltage: Minimizes power loss and heat generation during switching, improving overall system reliability.
- Die-level construction: Allows seamless integration into custom semiconductor packages or hybrid modules for tailored applications.
- Thermal stability: Maintains performance across a broad temperature range, vital for industrial environments.
- Compatibility with standard assembly processes: Facilitates straightforward incorporation into existing manufacturing workflows.
JANHCB2N5004-Transistor-Die Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 400 | V |
| Collector Current (IC) | 10 | A |
| DC Current Gain (hFE) | 40 to 100 | (typical) |
| Collector-Base Voltage (VCBO) | 600 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Power Dissipation (Pd) | 40 | W (die level, approximate) |
| Transition Frequency (fT) | 100 | MHz (typical) |
| Junction Temperature Range | -65 to 150 | ??C |
| Saturation Voltage (VCE(sat)) | 1.5 | V (max) |
JANHCB2N5004-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior voltage and current capabilities combined with efficient gain characteristics, making it ideal for industrial power switching and amplification. Compared to typical alternatives, it provides enhanced thermal stability and lower saturation voltage, which directly translates into improved energy efficiency and longer device lifespan. Its die-level format allows engineers to optimize package design for specific applications, offering greater integration flexibility and reliability.
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Typical Applications
- Industrial power control circuits where high voltage and current handling are critical, such as motor drivers and power converters, benefiting from robust switching characteristics and thermal stability.
- Amplification stages in high-voltage signal processing circuits requiring consistent gain and low distortion.
- Custom semiconductor module assembly for automotive or industrial electronics demanding high reliability and precise electrical performance.
- High-frequency switching applications up to 100 MHz, leveraging the transistor??s fast transition frequency for efficient operation.
JANHCB2N5004-Transistor-Die Brand Info
This transistor die is a product offered by IC Manufacturer, a trusted supplier specializing in high-quality semiconductor components for industrial electronics. The product is designed to meet stringent reliability and performance standards demanded by engineers and sourcing specialists in sectors such as automotive, industrial automation, and power management. IC Manufacturer??s commitment to precision and quality ensures that this transistor die consistently delivers the electrical characteristics required for advanced design implementations.
FAQ
What voltage levels can this transistor die handle safely?
The transistor die is rated for a collector-emitter voltage of up to 400 V and a collector-base voltage of 600 V. These ratings ensure it can operate safely in high-voltage industrial circuits without breakdown under normal conditions.
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What is the maximum current capacity of this transistor die?
This device supports a continuous collector current of up to 10 A, making it suitable for medium to high power applications requiring robust current handling and stable operation.
How does the transistor die??s gain performance impact circuit design?
With a DC current gain ranging typically from 40 to 100, this transistor provides effective signal amplification, enabling engineers to design efficient amplification stages with predictable performance and ease of biasing.
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Can this transistor die be used in high-frequency applications?
Yes, the transistor die has a transition frequency of approximately 100 MHz, which supports its use in moderate high-frequency switching and amplification tasks common in industrial control and signal processing.
What are the thermal limits and considerations for this transistor die?
The junction temperature range extends from -65 ??C to 150 ??C, allowing the device to operate reliably in harsh industrial environments. Proper thermal management in the final assembly is recommended to maintain performance and longevity.
