JANHCB2N4033 Overview
The JANHCB2N4033 is a high-performance NPN bipolar junction transistor designed for robust switching and amplification applications. Engineered for industrial and electronic systems, it offers reliable operation under varying temperature and voltage conditions. Its construction ensures stable gain and low noise characteristics, making it suitable for precision analog circuits and general-purpose switching. The device??s proven durability supports long-term use in demanding environments. Available through IC Manufacturer, this transistor meets the stringent requirements of engineers and sourcing specialists seeking dependable semiconductor components.
JANHCB2N4033 Key Features
- High current gain: Provides efficient amplification, improving signal strength while minimizing power loss.
- Low collector-emitter saturation voltage: Enhances switching efficiency, reducing heat dissipation in power applications.
- Wide voltage ratings: Supports operation in circuits with high voltages, ensuring versatility across various designs.
- Robust thermal stability: Maintains performance under elevated temperatures, increasing reliability in industrial environments.
JANHCB2N4033 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 40 | V |
| Collector-Base Voltage (VCBO) | 60 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 0.8 | A |
| DC Current Gain (hFE) | 100-300 | ?? |
| Transition Frequency (fT) | 100 | MHz |
| Collector Dissipation (PC) | 500 | mW |
| Operating Junction Temperature (TJ) | -55 to +150 | ??C |
JANHCB2N4033 Advantages vs Typical Alternatives
This transistor offers superior gain and lower saturation voltage compared to similar NPN devices, enabling improved efficiency in switching circuits. Its wide voltage and current ratings provide flexibility across multiple applications without compromising reliability. Enhanced thermal stability also ensures consistent performance where alternatives may fail under stress, making it an excellent choice for industrial-grade semiconductor solutions.
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Typical Applications
- General-purpose switching in industrial control systems, where reliable transistor operation is critical for system stability and efficiency.
- Signal amplification in audio and instrumentation circuits requiring low noise and consistent gain.
- Driver stages for relay and solenoid activation, benefiting from low saturation voltage to minimize power loss.
- Intermediate frequency amplification in communication devices, leveraging high transition frequency for improved signal integrity.
JANHCB2N4033 Brand Info
The JANHCB2N4033 is manufactured under strict quality standards by a reputable semiconductor producer known for industrial-grade components. This transistor series is recognized for its robust design and dependable performance in demanding environments. The product supports a broad range of electronic applications, backed by thorough testing and certification to meet industry requirements.
FAQ
What is the maximum collector current allowed for this transistor?
The maximum collector current for this device is 0.8 amperes. Operating beyond this rating can cause permanent damage or degrade performance, so it is important to design circuits within this current limit to ensure reliability.
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Can the transistor operate at high temperatures?
Yes, the transistor supports an operating junction temperature range from -55??C to +150??C, making it suitable for harsh environments and applications requiring thermal stability.
What is the typical DC current gain (hFE) range for this transistor?
The DC current gain typically ranges from 100 to 300, providing sufficient amplification for both switching and analog applications. The exact gain may vary depending on operating conditions and manufacturing tolerances.
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Is this transistor suitable for high-frequency applications?
With a transition frequency (fT) of approximately 100 MHz, this component is appropriate for moderate high-frequency uses such as intermediate frequency stages in communication equipment.
What are the voltage ratings for this transistor?
The device is rated for a collector-emitter voltage of 40 V, collector-base voltage of 60 V, and emitter-base voltage of 5 V. These ratings enable its use in circuits with moderate voltage requirements while ensuring safe operation within specified limits.







