JANHCB2N3700 JANHCB N-Channel MOSFET Transistor, 2N3700, TO-92 Package

JANHCB2N3700 Overview

The JANHCB2N3700 is a high-performance NPN bipolar junction transistor designed for robust switching and amplification applications. Engineered to deliver reliable operation with moderate gain and voltage handling, it is well-suited for general-purpose industrial electronics requiring efficient signal control. Featuring stable electrical characteristics under varying conditions, the device supports efficient integration into diverse circuit designs. This transistor is manufactured by IC Manufacturer, ensuring quality compliance and consistent performance for demanding environments.

JANHCB2N3700 Key Features

• High Collector-Emitter Voltage Rating: Enables operation in circuits requiring voltage handling up to 60V, enhancing design flexibility and robustness.
• Moderate Current Gain (hFE): Provides reliable amplification with a typical gain range suitable for switching and signal amplification tasks.
• Low Collector-Emitter Saturation Voltage: Minimizes power loss during switching, improving overall circuit efficiency and thermal management.
• Wide Operating Temperature Range: Supports stable performance in industrial environments with temperatures ranging from -55??C to +150??C.

JANHCB2N3700 Technical Specifications

JANHCB2N3700 Advantages vs Typical Alternatives

This transistor stands out for its balance of voltage tolerance and gain, delivering stable operation in both amplification and switching roles. Compared to typical alternatives, it offers lower saturation voltage, enhancing energy efficiency. Its wide temperature range ensures reliability in harsh environments, while the TO-18 package provides robust mechanical and thermal performance. These characteristics make it a preferred choice where moderate power handling and dependable switching speed are critical.

Typical Applications

• General-purpose amplification circuits requiring moderate gain and voltage handling, such as audio preamplifiers or sensor signal conditioning.
• Switching applications in industrial control systems, offering efficient load driving with low power dissipation.
• Driver stages for relay or LED indicators in instrumentation and automation systems.
• Low noise amplification in communication devices where signal integrity is important.

JANHCB2N3700 Brand Info

The JANHCB2N3700 transistor is part of the product portfolio from IC Manufacturer, a recognized leader in semiconductor solutions for industrial electronics. This device reflects the brand??s commitment to quality, precision, and reliability, meeting stringent industry standards. The product is engineered to support a wide range of applications requiring durable and efficient transistor performance, backed by extensive manufacturing experience and rigorous quality control.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current is rated at 200 mA, which suits low to moderate power applications such as signal amplification and switching in industrial circuits.

Can this transistor operate in high-temperature environments?

Yes, it supports an operating temperature range from -55??C up to +150??C, making it suitable for harsh industrial conditions and applications requiring thermal resilience.

What is the typical gain (hFE) range of this device?

The DC current gain typically ranges from 40 to 300 depending on the collector current and operating conditions, providing flexibility for various amplification needs.

Which package type does this transistor come in?

This transistor is housed in a TO-18 metal can package, offering excellent thermal dissipation and mechanical durability for industrial use.

Is this device suitable for switching applications?

Absolutely, the low collector-emitter saturation voltage and moderate gain make it well-suited for switching applications, enabling efficient load control with minimized power loss.