JANHCB2N2907A-Transistor-Die Overview
The JANHCB2N2907A-Transistor-Die is a high-performance PNP bipolar junction transistor die designed for amplification and switching applications within industrial and electronic circuits. This transistor die offers reliable operation with optimized electrical characteristics, making it suitable for integration into custom semiconductor packages or hybrid circuits. It delivers consistent gain and current handling capabilities, ensuring dependable performance in a variety of low to medium power applications. Sourced from a reputable IC Manufacturer, this transistor die is ideal for engineers and sourcing specialists looking for a robust semiconductor component with proven technology for precision electronics design.
JANHCB2N2907A-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Type | PNP Bipolar Junction Transistor (BJT) Die |
| Collector-Emitter Voltage (Vceo) | 60 V |
| Collector Current (Ic) | 600 mA |
| Power Dissipation (Pd) | 800 mW (die level) |
| DC Current Gain (hFE) | 100?C300 (typical) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Base-Emitter Voltage (Vbe) | 1.2 V (max) |
| Operating Temperature Range | -65??C to +150??C |
| Package | Unpackaged transistor die for hybrid or custom packaging |
JANHCB2N2907A-Transistor-Die Key Features
- High Gain Performance: Enables efficient signal amplification, improving overall circuit sensitivity and linearity.
- Robust Voltage Handling: Supports collector-emitter voltages up to 60 V, allowing use in a range of power control applications.
- Compact Die Format: Facilitates integration in customized semiconductor packages, helping engineers optimize device footprint and thermal management.
- Wide Operating Temperature Range: Ensures reliable operation under harsh environmental conditions, which is critical for industrial electronics.
Typical Applications
- Audio amplification circuits requiring linear gain and low distortion for high-fidelity sound systems.
- Switching regulators and power management circuits where efficient current control and voltage handling are essential.
- Hybrid integrated circuits in industrial control systems demanding precise transistor performance in compact form factors.
- Signal processing modules within telecommunications equipment benefiting from high-frequency response and gain stability.
JANHCB2N2907A-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior gain and voltage tolerance compared to many standard PNP transistors, with a compact die format that enables customized packaging and integration. It delivers consistent performance across a wide temperature range, enhancing reliability in industrial contexts. Its high transition frequency supports faster switching and amplification, making it an efficient choice for designers seeking precision and durability without compromising on power or size.
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JANHCB2N2907A-Transistor-Die Brand Info
The JANHCB2N2907A transistor die originates from a legacy semiconductor line associated with military and industrial-grade components, known for stringent quality standards and robust design. This product aligns with the JEDEC standard 2N2907A specifications, widely recognized in the industry for dependable PNP transistor performance. The transistor die is typically sourced from manufacturers specializing in discrete bipolar devices, where the emphasis is on proven reliability and compatibility with custom packaging solutions for high-reliability applications.
FAQ
What is the maximum current the transistor die can handle?
The transistor die can handle a collector current of up to 600 mA, which makes it suitable for moderate power amplification and switching tasks within electronic circuits.
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Can this transistor die be used in high-frequency applications?
Yes, with a typical transition frequency of 100 MHz, this transistor die supports high-frequency switching and amplification, suitable for telecommunications and signal processing applications.
