JANHCB2N2907A Overview
The JANHCB2N2907A is a high-performance PNP bipolar junction transistor designed for switching and amplifier applications in industrial and electronic circuits. Built to meet stringent military and commercial specifications, this transistor ensures reliable operation under demanding conditions. It features robust electrical characteristics such as a maximum collector current of 600mA and a voltage rating suitable for medium power applications. Its versatility and ruggedness make it ideal for audio amplifiers, signal processing, and general-purpose switching tasks. For sourcing precision components with consistent quality, visit IC Manufacturer.
JANHCB2N2907A Key Features
- High Collector Current Handling: Supports up to 600mA, enabling efficient switching and amplification in medium power circuits.
- Voltage Rating: With a collector-emitter voltage rating of 60V, it provides reliable operation in various voltage environments.
- High Gain Characteristics: Offers a DC current gain (hFE) range that ensures stable amplification and improved signal integrity.
- Wide Operating Temperature Range: Designed for reliable performance across -55??C to +150??C, supporting applications in harsh environments.
JANHCB2N2907A Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | PNP Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector-Base Voltage (VCBO) | 60 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 600 mA |
| DC Current Gain (hFE) | 100 to 300 (varies by test conditions) |
| Power Dissipation (PD) | 625 mW |
| Transition Frequency (fT) | 100 MHz (typical) |
| Operating Junction Temperature | -55??C to +150??C |
JANHCB2N2907A Advantages vs Typical Alternatives
This transistor offers superior current capacity and voltage ratings compared to many standard PNP BJTs, ensuring dependable performance in power-sensitive and temperature-variable industrial settings. Its extended operating temperature range and robust gain characteristics provide engineers with reliable, efficient integration, reducing the risk of failure and improving circuit stability in demanding applications.
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Typical Applications
- Audio amplifier stages requiring medium power gain and low distortion in consumer and industrial audio equipment.
- Switching regulators and power management circuits where efficient control of moderate load currents is essential.
- Signal amplification in analog circuits for sensors and instrumentation systems needing stable gain over temperature.
- General-purpose switching applications in automotive, industrial control, and consumer electronics.
JANHCB2N2907A Brand Info
The JANHCB2N2907A is a military-grade transistor manufactured to meet rigorous quality and reliability standards. It is part of a trusted series of discrete semiconductors designed specifically for demanding environments. The product??s design adheres to strict testing protocols, ensuring consistent electrical performance and durability. This reliability has made it a preferred choice among engineers and sourcing specialists for applications requiring rugged components with predictable behavior.
FAQ
What kind of transistor is the JANHCB2N2907A?
The JANHCB2N2907A is a PNP bipolar junction transistor (BJT). It is designed for amplification and switching, supporting moderate power levels with a collector current rating of 600mA and voltage capabilities up to 60 volts.
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What are the key electrical limits to consider when using this transistor?
Key limits include a maximum collector-emitter voltage of 60V, collector current up to 600mA, and emitter-base voltage of 5V. Additionally, power dissipation should not exceed 625mW to maintain safe operating conditions.
Can this transistor operate in harsh temperature environments?
Yes, it supports a wide operating junction temperature range from -55??C to +150??C, making it suitable for industrial and automotive applications where temperature extremes are common.
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How does the current gain (hFE) affect circuit design with this transistor?
The DC current gain typically ranges from 100 to 300, depending on the test conditions. This range ensures stable amplification performance, allowing engineers to design circuits with predictable gain and improved signal fidelity.
Is this transistor suitable for high-frequency applications?
The transition frequency (fT) is approximately 100 MHz, which makes it appropriate for moderate frequency applications such as audio frequency amplifiers and low to mid-frequency switching circuits, but not for very high-frequency RF uses.
