JANHCB2N2222A Transistor by JANHCB | NPN Amplifier Switch | TO-92 Package

  • This component functions as a transistor, enabling efficient current amplification for circuit control.
  • It features a bipolar junction design, which supports reliable switching performance in diverse applications.
  • The compact CBZ package offers board-space savings, facilitating integration into dense electronic assemblies.
  • Ideal for signal amplification tasks in audio or sensor circuits, improving overall system responsiveness.
  • Manufactured under stringent quality standards to ensure consistent operation and long-term reliability.
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JANHCB2N2222A Overview

The JANHCB2N2222A is a high-performance NPN bipolar junction transistor (BJT) designed for switching and amplification applications in industrial electronics. Featuring a robust maximum collector current and voltage rating, it offers reliable operation in moderate power circuits. This transistor delivers consistent gain and fast switching capabilities, making it suitable for general-purpose use in signal processing, control circuits, and driver stages. Its rugged construction ensures dependable performance under varying environmental conditions, ideal for engineers and sourcing specialists aiming for durable and efficient semiconductor components. For more detailed technical support and sourcing, visit IC Manufacturer.

JANHCB2N2222A Key Features

  • High Collector Current Capability: Supports collector currents up to 800mA, enabling effective handling of moderate power loads in switching applications.
  • Wide Voltage Ratings: Collector-Emitter voltage up to 40V ensures reliable operation in various industrial voltage environments.
  • Fast Switching Speed: Suitable for switching frequencies that improve circuit responsiveness and efficiency.
  • Robust Gain Characteristics: Consistent DC current gain (hFE) enhances amplification accuracy for signal processing tasks.

JANHCB2N2222A Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 800 mA
Power Dissipation (PD) 625 mW
DC Current Gain (hFE) 100 – 300 ??
Transition Frequency (fT) 250 MHz
Operating Temperature Range -55 to 150 ??C

JANHCB2N2222A Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage and current ratings with fast switching speed, which provides superior performance and reliability compared to many generic BJTs. Its wide operating temperature range and power dissipation capacity enable robust integration in industrial environments. The consistent gain and maximum collector current make it an efficient choice for switching and amplification tasks, ensuring enhanced circuit stability and longevity.

Typical Applications

  • General-purpose switching circuits: Ideal for use in relay drivers, LED drivers, and low-power motor control due to its high current handling and fast switching capabilities.
  • Signal amplification: Suitable for audio and RF amplification where moderate gain and frequency response are required.
  • Industrial control systems: Used in sensor interfacing and control logic circuits demanding reliable transistor performance.
  • Power management circuits: Employed in voltage regulation and power distribution modules requiring efficient current switching.

JANHCB2N2222A Brand Info

The JANHCB2N2222A is a product offered by a leading semiconductor provider known for quality and reliability in discrete components. This transistor is manufactured under stringent quality controls ensuring consistency in electrical performance and durability. It is part of a series widely adopted in industrial and commercial electronics due to its proven track record and excellent electrical characteristics that meet industry standards.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current rating is 800mA, which allows this transistor to handle moderate power loads common in switching and amplification applications.

Can this transistor operate at high frequencies?

Yes, the device features a transition frequency (fT) of approximately 250MHz, making it suitable for moderate frequency switching and amplification tasks.

What are the voltage limits I should consider when using this transistor?

The collector-emitter voltage maximum is 40V, collector-base voltage is 75V, and emitter-base voltage is 6V. Operating within these limits ensures device reliability and prevents breakdown.

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Is this transistor suitable for use in harsh temperature environments?

Yes, it supports an operating temperature range from -55??C up to 150??C, allowing it to perform reliably under a wide range of environmental conditions.

What type of applications is this transistor best suited for?

This transistor is best suited for general-purpose switching, signal amplification, industrial control systems, and power management circuits requiring reliable and consistent transistor performance.

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