JANHCA2N4150-Transistor-Die Overview
The JANHCA2N4150-Transistor-Die is a high-performance bipolar junction transistor die designed for robust switching and amplification applications in industrial electronics. Engineered with precise silicon fabrication technology, this transistor die delivers reliable electrical characteristics such as high current gain and low saturation voltage. Its compact die structure supports efficient thermal management and integration into multi-chip modules or custom semiconductor packages. Ideal for engineers and sourcing specialists, this transistor die offers consistent performance in demanding environments where stability and electrical precision are paramount. For detailed sourcing and technical support, visit IC Manufacturer.
JANHCA2N4150-Transistor-Die Key Features
- High current gain (hFE): Enhances amplification efficiency, reducing the need for additional gain stages.
- Low collector-emitter saturation voltage (VCE(sat)): Minimizes power loss during switching, improving overall energy efficiency.
- Robust thermal capability: Supports reliable operation under elevated temperature conditions, ensuring device longevity.
- Compact die size: Facilitates integration into custom semiconductor packages and multi-chip modules, allowing flexible design implementations.
JANHCA2N4150-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor Die |
| Collector-Emitter Voltage (VCEO) | 150 V |
| Collector Current (IC) | 5 A (max) |
| DC Current Gain (hFE) | 40 – 160 (varies by test conditions) |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.5 V (typical) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Junction Temperature (Tj) | 150 ??C (max) |
| Package Type | Bare Die |
JANHCA2N4150-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers a superior balance of high voltage tolerance and current handling capability compared to typical discrete transistor components. Its low saturation voltage reduces switching losses, directly improving power efficiency in industrial circuits. Furthermore, the compact die format supports advanced packaging techniques, enabling integration flexibility not commonly available in packaged transistors. These advantages make it a preferred choice where precise control, thermal stability, and space-saving are critical design factors.
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Typical Applications
- Power amplification stages in industrial control systems, where reliable current gain and voltage handling are essential for stable operation.
- Switching elements in DC-DC converters, benefiting from low saturation voltage to optimize efficiency.
- Signal amplification in communication equipment, leveraging fast transition frequency for improved frequency response.
- Custom semiconductor module fabrication, enabling integration in multi-chip solutions requiring high-performance transistor dies.
JANHCA2N4150-Transistor-Die Brand Info
The JANHCA2N4150-Transistor-Die is a product from a leading semiconductor manufacturer specializing in precision analog and power components. The brand is recognized for delivering high-quality transistor dies designed for demanding industrial and electronic applications. This transistor die reflects the manufacturer??s commitment to performance, reliability, and integration flexibility, supporting engineers and sourcing professionals with dependable components suitable for advanced electronic system designs.
FAQ
What type of transistor is the JANHCA2N4150-Transistor-Die?
It is an NPN bipolar junction transistor die designed for high voltage and current applications. This type is widely used for amplification and switching tasks in industrial electronics.
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What are the maximum voltage and current ratings for this transistor die?
The transistor die supports a maximum collector-emitter voltage of 150 V and a collector current up to 5 A, making it suitable for moderate power applications.
How does the low saturation voltage benefit device performance?
A low collector-emitter saturation voltage reduces the power dissipated during switching, leading to improved energy efficiency and less heat generation within the system.
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Can this transistor die be integrated into multi-chip modules?
Yes, its compact bare die format is specifically designed to facilitate integration into custom semiconductor packages and multi-chip modules, offering design flexibility.
What thermal conditions can this transistor die withstand?
The transistor die can operate reliably at junction temperatures up to 150 ??C, ensuring stable performance even in elevated temperature environments common in industrial applications.
