JANHCA2N3810-Dual-Transistor-Die by JANHCA | High-Performance Dual Transistor Die Package

  • This dual-transistor die integrates two transistors for efficient signal amplification and switching in compact circuits.
  • Its electrical characteristics ensure stable performance, critical for maintaining consistent device operation.
  • The bare die format supports minimal footprint designs, enabling flexible integration in space-constrained applications.
  • Ideal for use in power management modules where precise control and thermal handling improve overall system reliability.
  • Manufactured under strict quality controls to provide dependable operation and reduce failure rates over time.
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产品上方询盘

JANHCA2N3810-Dual-Transistor-Die Overview

The JANHCA2N3810-Dual-Transistor-Die is a precision semiconductor component designed for high-performance amplification and switching applications. This dual transistor die integrates two matched NPN transistors on a single silicon substrate, ensuring consistent electrical characteristics and enhanced reliability. Engineered for use in analog circuits, the device supports robust current handling and voltage ratings suitable for industrial and consumer electronics. Its compact die architecture facilitates efficient thermal management and easy integration into hybrid modules or multi-chip assemblies. For sourcing and detailed specifications, visit IC Manufacturer.

JANHCA2N3810-Dual-Transistor-Die Key Features

  • Matched dual NPN transistors: Ensures high gain matching and symmetrical performance, critical for differential amplifier designs.
  • High voltage and current ratings: Supports collector-emitter voltages up to 80 V and collector currents up to 200 mA, enabling reliable operation in demanding circuits.
  • Low saturation voltage: Minimizes power dissipation and improves overall circuit efficiency.
  • Precision die-level integration: Reduces parasitic elements and enhances frequency response, beneficial for high-speed analog applications.

JANHCA2N3810-Dual-Transistor-Die Technical Specifications

ParameterValueUnit
TypeDual NPN Bipolar Transistor Die
Collector-Base Voltage (VCBO)100V
Collector-Emitter Voltage (VCEO)80V
Emitter-Base Voltage (VEBO)5V
Collector Current (IC)200mA
DC Current Gain (hFE)40?C200
Transition Frequency (fT)100MHz
Power Dissipation (Ptot)400mW
PackageDie (bare silicon)

JANHCA2N3810-Dual-Transistor-Die Advantages vs Typical Alternatives

This dual transistor die offers superior gain matching and low saturation voltage compared to discrete transistor pairs, resulting in improved linearity and reduced power loss. Its integrated die format minimizes parasitic capacitance, enhancing frequency response and reliability in precision analog circuits. These characteristics make it a preferred choice for engineers seeking compact, high-performance transistor solutions in industrial and communication equipment.

Typical Applications

  • Differential amplifier circuits: Ideal for use in signal processing applications requiring matched transistor pairs with stable gain characteristics and low noise.
  • Audio amplification: Enables low distortion and efficient power usage in audio preamplifier stages.
  • Switching circuits: Suitable for moderate current switching tasks in control and interface modules.
  • Signal conditioning: Effective in analog front-end circuits for sensors and instrumentation due to its precise electrical parameters.

JANHCA2N3810-Dual-Transistor-Die Brand Info

The JANHCA2N3810-Dual-Transistor-Die is a product of a reputable semiconductor manufacturer known for delivering reliable and high-quality transistor dies for industrial and consumer electronics. This product line emphasizes precision, durability, and compatibility with hybrid circuit assemblies, supporting advanced analog design needs. The brand??s focus on stringent quality control ensures consistent performance and longevity, making it a trusted component for engineers and sourcing specialists worldwide.

FAQ

What type of transistor configuration does this dual transistor die provide?

The device consists of two matched NPN bipolar transistors fabricated on a single silicon die. This configuration is optimized for applications requiring closely matched transistor pairs, such as differential amplifiers or current mirrors.

What are the maximum voltage and current ratings for this dual transistor die?

The dual transistor die supports a collector-base voltage (VCBO) up to 100 V, a collector-emitter voltage (VCEO) of 80 V, and a continuous collector current (IC) of 200 mA, making it suitable for moderate power analog and switching circuits.

How does the die format benefit circuit integration compared to packaged transistors?

Being a bare silicon die, it allows direct integration into hybrid modules or multi-chip assemblies, reducing parasitic capacitances and inductances found in packaged components. This enhances high-frequency performance and thermal management within compact designs.

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产品中间询盘

What typical applications can benefit from using this dual transistor die?

Applications include differential amplifiers, audio preamplifiers, switching circuits, and signal conditioning modules where precise gain matching, low distortion, and reliable switching are critical.

Is the dual transistor die suitable for automated assembly processes?

Yes, the bare die format is designed for use in automated die bonding and wire bonding processes, enabling efficient integration into hybrid circuits and custom semiconductor packages utilized in industrial electronics manufacturing.

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