JANHCA2N3636-Transistor-Die by JANHCA2N | High-Performance Switching Transistor Die

  • This transistor die enables precise current amplification, improving signal control in electronic circuits.
  • Featuring a compact package, it allows efficient board-space utilization in densely packed devices.
  • Its robust design supports stable operation under varying electrical loads, enhancing device reliability.
  • Ideal for use in power regulation modules, it helps maintain consistent voltage levels in complex systems.
  • The JANHCA2N3636-Transistor-Die undergoes stringent quality checks to ensure long-term performance stability.
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产品上方询盘

JANHCA2N3636-Transistor-Die Overview

The JANHCA2N3636-Transistor-Die is a high-performance semiconductor component designed for precision amplification and switching applications. Engineered with a robust silicon die, it offers reliable electrical characteristics suited for industrial and commercial electronics. This transistor die provides excellent current handling and thermal stability, making it ideal for integration into power management circuits and signal processing devices. Manufactured with stringent quality controls, it supports consistent performance in demanding environments. Sourcing this die from a trusted IC Manufacturer ensures compatibility and efficiency for engineers and procurement specialists focused on advanced semiconductor solutions.

JANHCA2N3636-Transistor-Die Key Features

  • High Current Capacity: Supports substantial collector current enabling robust load driving capabilities.
  • Low Saturation Voltage: Minimizes power loss during switching, enhancing overall circuit efficiency.
  • Thermal Stability: Maintains consistent operation under elevated temperature conditions, improving system reliability.
  • Compact Die Size: Facilitates integration in space-constrained designs without compromising performance.

JANHCA2N3636-Transistor-Die Technical Specifications

Parameter Value
Collector-Emitter Voltage (Vce) 60 V
Collector Current (Ic) 15 A
Power Dissipation (Pd) 75 W
Transition Frequency (ft) 50 MHz
Gain Bandwidth Product 30 MHz
Collector-Base Voltage (Vcb) 80 V
Base-Emitter Voltage (Vbe) 5 V
Operating Junction Temperature (Tj) 150 ??C

JANHCA2N3636-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior thermal tolerance and higher collector current capacity compared to standard transistor dies. Its low saturation voltage reduces energy loss during switching operations, enhancing power efficiency. The compact design provides easier integration into complex circuits without sacrificing performance, making it a reliable and efficient choice over typical alternatives in industrial and power electronics applications.

Typical Applications

  • Power amplification circuits requiring high current handling and thermal stability for consistent output.
  • Switching regulators where efficient energy conversion and low loss are critical.
  • Industrial motor control assemblies benefiting from reliable transistor switching performance.
  • Signal processing modules needing precise and stable transistor operation in compact form factors.

JANHCA2N3636-Transistor-Die Brand Info

The JANHCA2N3636-Transistor-Die is offered by a leading semiconductor manufacturer known for delivering high-quality transistor dies optimized for industrial electronics. This product line emphasizes durability and electrical precision, supporting engineers in designing robust power and control systems. Each die undergoes rigorous testing to meet stringent industry standards, ensuring dependable performance and integration flexibility in various application environments.

FAQ

What is the maximum collector current rating of this transistor die?

The maximum collector current rating for this transistor die is 15 amperes, allowing it to handle substantial current loads in power amplification and switching circuits.

Can this transistor die operate at high temperatures?

Yes, the device supports an operating junction temperature up to 150 ??C, making it suitable for high-temperature environments commonly found in industrial electronics.

What voltage levels can this transistor die handle?

This transistor die is rated for a collector-emitter voltage of 60 volts and a collector-base voltage of 80 volts, providing flexibility for a range of medium-voltage applications.

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产品中间询盘

How does the low saturation voltage benefit circuit design?

Low saturation voltage reduces power dissipation during transistor switching, improving energy efficiency and reducing heat generation within the circuit.

Is this transistor die compatible with compact electronic assemblies?

Yes, its compact die size allows for easy integration into space-constrained electronic designs without compromising performance or reliability.

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