JAN2N918UB-Transistor by JAN – High-Speed Switching Transistor, TO-18 Metal Can Package

  • This transistor amplifies electrical signals, enabling efficient switching and control in electronic circuits.
  • It features a high-frequency response that supports fast signal processing in communication devices.
  • The compact package design saves board space, facilitating integration into dense circuit layouts.
  • Ideal for RF amplification tasks, it enhances signal clarity and strength in wireless communication systems.
  • Manufactured to meet standard reliability requirements, it ensures consistent performance under typical operating conditions.
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JAN2N918UB-Transistor Overview

The JAN2N918UB transistor is a high-performance NPN bipolar junction transistor (BJT) designed for fast switching and low noise amplification in industrial and military-grade applications. This transistor features a robust construction that ensures reliability under demanding operating conditions. Its high transition frequency and low capacitance make it ideal for radio frequency (RF) circuits and high-speed switching applications. The device complies with military specifications (JAN) to guarantee consistent quality and performance. Available through IC Manufacturer, this transistor supports engineers and sourcing specialists seeking durable, precision components for critical electronic systems.

JAN2N918UB-Transistor Key Features

  • High transition frequency: Enables efficient operation in RF and high-speed switching circuits, improving signal integrity and response times.
  • Low noise figure: Provides superior amplification with minimal signal distortion, essential for sensitive communication and measurement applications.
  • Military-grade reliability: Built to JAN specifications, ensuring durability and stable performance in harsh environmental conditions.
  • Compact TO-18 metal can package: Facilitates easy integration into compact circuit designs while offering excellent thermal dissipation.

JAN2N918UB-Transistor Technical Specifications

ParameterValueUnit
Transistor TypeNPN Bipolar Junction?C
Collector-Emitter Voltage (VCEO)40V
Collector-Base Voltage (VCBO)60V
Emitter-Base Voltage (VEBO)5V
Collector Current (IC)50mA
Power Dissipation (Ptot)300mW
Transition Frequency (fT)250MHz
DC Current Gain (hFE)50 to 300?C
Package TypeTO-18 Metal Can?C

JAN2N918UB-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced switching speed and low noise performance compared to typical general-purpose BJTs, making it well-suited for RF and precision amplification tasks. Its compliance with JAN military standards ensures higher reliability and consistency under rigorous conditions. The TO-18 metal can package provides superior thermal management and mechanical stability, offering a clear advantage over plastic-encapsulated transistors in demanding industrial or defense environments.

Typical Applications

  • High-frequency RF amplifiers: The device??s 250 MHz transition frequency supports amplification in communication and radar systems where signal clarity is critical.
  • Switching circuits: Fast switching capabilities make it suitable for digital logic and pulse generation within industrial control systems.
  • Low-noise preamplifiers: Its low noise figure benefits sensitive instrumentation and measurement equipment requiring clean signal amplification.
  • Military and aerospace electronics: The rugged construction and JAN qualification ensure dependable operation in harsh environments and mission-critical systems.

JAN2N918UB-Transistor Brand Info

The JAN2N918UB transistor is produced under JAN (Joint Army-Navy) standards, reflecting a commitment to military-grade quality and reliability. This brand designation guarantees the device meets stringent testing and certification protocols for use in aerospace, defense, and other high-reliability industrial sectors. The product is manufactured with precise process control to deliver consistent electrical characteristics and ruggedness, supporting long product lifecycles in critical applications.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current for this transistor is 50 mA. Operating within this limit ensures the device maintains optimal performance and avoids thermal or electrical damage during use.

Can this transistor be used in high-frequency circuits?

Yes, with a transition frequency of approximately 250 MHz, this transistor is well-suited for high-frequency applications such as RF amplifiers and fast switching circuits, delivering reliable performance at these frequencies.

What package type does this transistor use?

This transistor is housed in a TO-18 metal can package, which offers excellent thermal dissipation and mechanical durability, making it ideal for environments requiring robust and stable components.

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Is the JAN2N918UB suitable for military applications?

Absolutely. It meets JAN military specifications, ensuring the transistor undergoes rigorous testing for reliability and durability. This makes it suitable for critical military and aerospace electronics where performance and longevity are essential.

What are the voltage ratings for this transistor?

The transistor supports a collector-emitter voltage up to 40 V, collector-base voltage up to 60 V, and emitter-base voltage up to 5 V. These ratings allow it to operate safely within a variety of low-to-medium voltage applications.

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