JAN2N918UB/TR Vishay NPN Transistor – High Gain Amplifier, TO-18 Metal Can Package

  • JAN2N918UB/TR is a transistor designed for signal amplification and switching tasks in electronic circuits.
  • The device features a specific gain characteristic that ensures consistent performance across varying load conditions.
  • Its compact package minimizes board space, allowing for efficient layout in densely populated circuit designs.
  • Ideal for use in RF amplification modules where stable signal integrity is crucial under different operating frequencies.
  • Manufactured to meet industry reliability standards, ensuring long-term operation in demanding environments.
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产品上方询盘

JAN2N918UB/TR Overview

The JAN2N918UB/TR is a high-performance NPN bipolar junction transistor designed for military and industrial applications requiring robust switching and amplification capabilities. Built with stringent quality standards, this transistor offers reliable operation over a wide temperature range and exhibits low noise characteristics, making it suitable for precision analog circuits. It features a TO-18 metal can package, ensuring enhanced thermal dissipation and mechanical durability. Ideal for use in RF amplification, signal processing, and control circuits, this device meets JEDEC JAN specifications for dependable performance in harsh environments. For detailed sourcing and additional product support, visit IC Manufacturer.

JAN2N918UB/TR Key Features

  • High current gain: Provides efficient amplification with consistent performance, reducing the need for additional gain stages.
  • Low noise figure: Enhances signal integrity in sensitive analog and RF applications, improving overall system accuracy.
  • Wide operating temperature range: Ensures reliable functionality in extreme environmental conditions, critical for military-grade electronics.
  • Robust TO-18 metal can package: Offers superior thermal conductivity and mechanical protection, facilitating durability and heat management in compact designs.

JAN2N918UB/TR Technical Specifications

Parameter Value
Transistor Type NPN Bipolar Junction
Collector-Emitter Voltage (VCEO) 30 V
Collector Current (IC) 50 mA
Power Dissipation (Ptot) 300 mW
Transition Frequency (fT) 100 MHz (typical)
Gain Bandwidth Product 100 MHz
Noise Figure Low (specified per datasheet)
Operating Temperature Range -55??C to +125??C
Package Type TO-18 Metal Can

JAN2N918UB/TR Advantages vs Typical Alternatives

This transistor stands out for its combination of low noise performance and high gain in a robust metal can package, offering superior thermal and mechanical reliability compared to plastic-encapsulated alternatives. The extended temperature range and adherence to JAN military standards make it ideal for high-reliability applications where long-term stability and precision are critical.

Typical Applications

  • RF and IF amplification in communication systems requiring consistent gain and low noise for signal clarity and integrity.
  • Military and aerospace circuits demanding rugged, temperature-tolerant components with proven reliability.
  • Precision analog signal processing in instrumentation and control systems.
  • Switching applications in industrial electronics where stable operation and durability are essential.

JAN2N918UB/TR Brand Info

The JAN2N918UB/TR is produced under rigorous JAN (Joint Army-Navy) quality standards, ensuring it meets stringent military-grade requirements for reliability and performance. This transistor is part of a legacy series known for dependable operation in harsh environments, backed by comprehensive manufacturing and testing protocols that support mission-critical applications across defense and industrial sectors.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current for the device is 50 mA, which allows it to handle moderate power amplification and switching tasks while maintaining reliable operation within specified limits.

Can this transistor operate in extreme temperature environments?

Yes, it supports an operating temperature range from -55??C to +125??C, making it suitable for applications exposed to harsh environmental conditions, including military and aerospace uses.

What package type does the transistor use, and why is it beneficial?

It is housed in a TO-18 metal can package, which provides excellent thermal dissipation and mechanical protection, enhancing durability and stability in high-reliability circuits.

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产品中间询盘

Is this transistor suitable for RF amplifier circuits?

Absolutely, with a transition frequency around 100 MHz and low noise characteristics, it is well-suited for RF and intermediate frequency amplification stages requiring clean signal processing.

How does the JAN2N918UB/TR compare to plastic-encapsulated transistors?

This metal can encapsulated device offers improved thermal management and mechanical robustness, along with compliance to military-grade standards, making it superior in reliability and longevity for demanding applications.

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