JAN2N6650-Darlington Overview
The JAN2N6650-Darlington is a high-voltage, high-current power transistor designed for demanding industrial and military applications. Featuring a Darlington configuration, it provides significant current gain while maintaining robust voltage handling capabilities. This device is optimized for switching and amplification tasks requiring reliable operation under elevated voltages and currents. With a maximum collector-emitter voltage of 120V and continuous collector current of up to 8A, it delivers efficient performance in power control scenarios. Its rugged design ensures long-term durability in harsh environments. For sourcing and detailed technical support, visit IC Manufacturer.
JAN2N6650-Darlington Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 120 V | Maximum voltage the transistor can withstand between collector and emitter |
| Collector Current (IC) | 8 A | Maximum continuous collector current rating |
| Gain Bandwidth Product (fT) | Variable (typical low for power Darlington) | Frequency at which current gain drops to unity |
| Power Dissipation (PD) | 75 W | Maximum power the device can dissipate without damage |
| DC Current Gain (hFE) | ??1000 | Typical current gain due to Darlington pair configuration |
| Emitter-Base Voltage (VEB) | 5 V | Maximum voltage between emitter and base |
| Junction Temperature (Tj) | +200??C | Maximum operating junction temperature |
| Package Type | TO-3 | Metal can package suitable for high power dissipation |
JAN2N6650-Darlington Key Features
- High Current Gain: The Darlington configuration delivers a typical DC current gain of over 1000, enabling effective switching with minimal base drive current.
- Robust Voltage Handling: Rated for 120V collector-emitter voltage, it supports high-voltage industrial applications ensuring safe operation under stress.
- High Power Dissipation Capability: With a power dissipation rating of 75W, it efficiently manages heat in demanding environments, increasing device longevity.
- Reliable TO-3 Package: The metal can TO-3 package provides excellent thermal conductivity and mechanical durability, facilitating effective heat sinking.
Typical Applications
- Power amplifier stages in industrial control systems where high gain and high voltage tolerance are required for signal amplification and switching.
- Switching regulators and power supplies that demand efficient high-current switching with low input drive requirements.
- Motor control circuits that operate under elevated voltages and currents, requiring rugged and reliable transistor solutions.
- High-voltage relay drivers and solenoid drivers used in automation and military-grade electronic assemblies.
JAN2N6650-Darlington Advantages vs Typical Alternatives
This device offers superior current gain compared to single transistors, reducing the base drive current needed and simplifying driver circuitry. Its high voltage and current ratings provide versatility across demanding industrial applications. The TO-3 package enhances heat dissipation and mechanical robustness, improving reliability under continuous high-power operation. Compared to alternatives, it delivers a balanced combination of sensitivity, power handling, and thermal management, making it ideal for long-life, mission-critical systems.
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JAN2N6650-Darlington Brand Info
The JAN2N6650-Darlington transistor adheres to the Joint Army-Navy (JAN) standards, indicating its qualification for military and aerospace applications. These standards ensure stringent reliability, quality, and performance criteria beyond typical commercial devices. The transistor is commonly manufactured by established semiconductor producers specializing in high-reliability discrete components. Its design and testing conform to MIL-
