JAN2N6649-Darlington Transistor ?C NPN High Gain, TO-3 Package by ON Semiconductor

JAN2N6649-Darlington Overview

The JAN2N6649 is a high-gain NPN Darlington transistor designed for demanding industrial and military-grade switching applications. Featuring a robust collector-emitter voltage rating of 80V and collector current capacity of 4A, this device ensures reliable performance under high load conditions. Its Darlington configuration provides exceptional current gain, minimizing input drive requirements and enhancing overall circuit efficiency. The transistor??s rugged construction meets JAN (Joint Army-Navy) standards, making it suitable for environments where durability and consistency are critical. Sourcing this transistor from a trusted IC Manufacturer guarantees compliance with stringent quality and reliability benchmarks.

JAN2N6649-Darlington Technical Specifications

JAN2N6649-Darlington Key Features

• High Current Gain: Provides a minimum DC gain of 1000, reducing input drive current and simplifying interface circuitry.
• Robust Voltage Ratings: Supports collector-emitter voltages up to 80V and collector-base voltages up to 100V, suitable for high-voltage switching.
• High Collector Current Capability: Handles continuous collector currents up to 4A, enabling control of moderate to high power loads.
• Elevated Power Dissipation: Rated for 30W power dissipation, allowing for reliable operation in thermally demanding environments.
• Military-Grade Reliability: Constructed to JAN standards ensuring performance consistency in harsh industrial and defense applications.
• Wide Operating Temperature Range: Junction temperature tolerance up to 200??C supports stable functionality across varied thermal conditions.
• Low Transition Frequency: 3 MHz transition frequency appropriate for switching and analog applications where speed is moderate but gain is critical.

Typical Applications

• Industrial motor control circuits requiring high current gain and reliable switching under elevated voltages and continuous loads.
• Power amplifier stages in audio and signal processing systems where linearity and gain are essential.
• Relay drivers and solenoid actuators benefiting from the device??s high gain and robust current capacity.
• Military and aerospace electronics demanding rugged components compliant with JAN specifications for durability and environmental resilience.

JAN2N6649-Darlington Advantages vs Typical Alternatives

This transistor stands out against typical bipolar junction transistors due to its exceptionally high current gain, which reduces the need for high input current drive. Its elevated voltage and current ratings combined with JAN certification ensure enhanced reliability and longevity under harsh operating conditions. These factors make it a preferred choice for engineers prioritizing sensitivity, robustness, and power handling in industrial-grade switching and amplification tasks.

JAN2N6649-Darlington Brand Info

The JAN2N6649 is manufactured to meet the rigorous standards of Joint Army-Navy (JAN) certification, a hallmark of quality and reliability in military and aerospace electronics. While multiple semiconductor manufacturers produce JAN-compliant devices, the designation indicates strict adherence to performance, screening, and environmental requirements. This transistor is typically sourced from established IC suppliers specializing in high-reliability discrete components suitable for mission-critical applications. Its brand lineage is synonymous with dependable operation in demanding industrial and defense sectors.

FAQ

What is the maximum collector current rating for this Darlington transistor?