JAN2N657-Transistor Overview
The JAN2N657 is a robust silicon NPN bipolar junction transistor designed for high voltage and medium power switching applications. Engineered to deliver reliable performance in demanding industrial environments, this transistor supports collector-emitter voltages up to 200V and collector currents reaching 1.5A. Its rugged construction and JEDEC registered JAN military specification ensure enhanced durability and stability, making it ideal for aerospace, defense, and industrial electronics. Sourcing specialists and design engineers will appreciate the device??s consistency and proven reliability, which contribute to streamlined procurement and dependable circuit operation. For further technical insights and sourcing, visit IC Manufacturer.
JAN2N657-Transistor Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 200 V |
| Collector-Base Voltage (VCBO) | 300 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 1.5 A (continuous) |
| Power Dissipation (Ptot) | 20 W |
| DC Current Gain (hFE) | 40 to 160 (at IC = 150 mA) |
| Transition Frequency (fT) | 20 MHz (typical) |
| Operating Junction Temperature (TJ) | -65??C to +200??C |
JAN2N657-Transistor Key Features
- High voltage capability: Supports up to 200 V collector-emitter voltage, enabling efficient switching in high voltage circuits.
- Medium power handling: 1.5 A continuous collector current ensures suitability for moderate load applications without excessive heat generation.
- Wide operating temperature range: Rated from -65??C to +200??C, providing reliable performance in harsh and varying thermal environments.
- Military-grade reliability: Manufactured to JAN (Joint Army-Navy) standards, ensuring ruggedness and enhanced device longevity under stressful conditions.
Typical Applications
- Switching circuits in aerospace and defense systems requiring reliable operation under high voltage and temperature extremes.
- Industrial control systems where medium power transistors are necessary for driving relays, solenoids, or motors.
- Signal amplification in analog circuits benefiting from stable gain characteristics over wide temperature ranges.
- Power management and regulation circuits in harsh environments, including automotive and military hardware platforms.
JAN2N657-Transistor Advantages vs Typical Alternatives
This transistor offers a distinct advantage over common commercial-grade alternatives due to its JEDEC registered JAN military specification compliance, which guarantees superior reliability and thermal tolerance. Its higher maximum voltage and current ratings allow for more robust circuit designs with improved safety margins. The broad operating temperature range and consistent gain parameters enhance precision and durability, making it a dependable choice for demanding industrial and defense applications.
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JAN2N657-Transistor Brand Info
The JAN2N657 transistor is a military-grade component originally produced under the JAN (Joint Army-Navy) standard, which sets rigorous quality and performance requirements. Historically, this transistor has been manufactured by various certified semiconductor producers specializing in high-reliability devices for defense and aerospace sectors. The JAN designation indicates strict screening and testing protocols, ensuring stable operation in critical applications. This product remains a trusted solution for engineers seeking proven performance and ruggedness in challenging electrical environments.
FAQ
What is the maximum voltage rating of the JAN2N657 transistor?
The maximum collector-emitter voltage rating is 200 volts, allowing the transistor to operate safely in high voltage switching and amplification applications.
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Can this transistor handle high temperatures in industrial environments?
Yes,







