JAN2N656S-Transistor NPN Power Transistor in TO-3 Package by Motorola

JAN2N656S-Transistor Overview

The JAN2N656S transistor is a high-performance, silicon NPN bipolar junction transistor designed for industrial and military-grade applications requiring reliable switching and amplification. Built to meet stringent military standards (JAN – Joint Army-Navy), this transistor ensures consistent operation under harsh environmental conditions. With a collector-emitter voltage rating of 100V and a collector current up to 1A, it is well suited for medium power amplification and switching tasks. The device??s robust construction enhances longevity and thermal stability, making it ideal for demanding electronics systems. For detailed specifications and sourcing, visit IC Manufacturer.

JAN2N656S-Transistor Technical Specifications

JAN2N656S-Transistor Key Features

• High voltage handling: With a collector-emitter voltage rating of 100 V, it supports robust switching in moderate power circuits, ensuring circuit protection and reliability.
• Military-grade quality: Manufactured to stringent JAN standards, it guarantees stable performance under extreme environmental and temperature conditions, critical for defense and aerospace applications.
• Wide gain range: A DC current gain between 40 and 160 offers flexibility for amplification tasks, improving signal integrity in analog and switching circuits.
• Metal TO-18 package: Provides excellent heat dissipation and mechanical durability, supporting long-term reliability in industrial environments.

Typical Applications

• Medium power switching and amplification in industrial control systems, enabling efficient and reliable operation in harsh environments requiring stable transistor performance.
• Signal amplification stages in communication and radar equipment, benefiting from the device??s high gain and frequency response.
• Military and aerospace electronic circuits, where ruggedness and compliance with military standards ensure mission-critical reliability.
• Power regulation and driver stages in instrumentation and test equipment, where consistent gain and thermal stability are mandatory.

JAN2N656S-Transistor Advantages vs Typical Alternatives

This transistor stands out due to its military-grade qualification, ensuring superior reliability and thermal stability compared to commercial-grade alternatives. Its high voltage rating and wide DC gain range enable flexible application across switching and amplification tasks. The TO-18 metal package enhances heat dissipation and mechanical robustness, providing long service life even in demanding industrial environments. These advantages make it ideal for engineers seeking a durable, high-performance transistor for critical systems.

JAN2N656S-Transistor Brand Info

The JAN2N656S transistor is typically manufactured by leading semiconductor companies specializing in military and industrial-grade components. The JAN prefix indicates compliance with Joint Army-Navy standards, reflecting rigorous testing for temperature cycling, mechanical shock, and radiation resistance. This device is part of a legacy of premium silicon transistors designed for aerospace and defense applications, ensuring consistency, traceability, and reliability. It is frequently sourced through authorized distributors catering to high-reliability electronic systems.

FAQ

What is the maximum collector current rating of the JAN2N656S transistor?

The maximum continuous collector current rating for this transistor is 1 ampere. This allows it to handle moderate power switching and amplification applications without exceeding its thermal limits.

Is the JAN2N656S suitable for high-frequency applications?

While it has a gain bandwidth product of approximately 20 MHz, it is best suited for low to medium frequency amplification and switching. For very high-frequency applications, other transistors with higher fT values would