JAN2N6352P-Darlington-PIND High-Gain Transistor in PIND Package by ON Semiconductor

JAN2N6352P-Darlington-PIND Overview

The JAN2N6352P is a high-voltage NPN Darlington transistor designed for demanding industrial and military applications requiring robust performance and reliability. Featuring a PIN diode protection structure, this device offers enhanced ruggedness against transient voltage spikes and improved switching characteristics. With a collector-emitter voltage rating suitable for high-voltage circuits and a gain configuration that provides significant current amplification, it is ideal for interfacing and power driver applications. Designed to meet stringent military specifications, the transistor ensures consistent operation in harsh environments, making it a reliable choice for engineers and sourcing specialists looking for proven performance in high-voltage transistor solutions. For detailed specifications and sourcing, visit IC Manufacturer.

JAN2N6352P-Darlington-PIND Technical Specifications

JAN2N6352P-Darlington-PIND Key Features

• High voltage capability: Supports up to 200 V collector-emitter voltage, enabling operation in demanding power circuits without breakdown risks.
• Darlington pair configuration: Provides ultra-high current gain, reducing base drive requirements and simplifying interface circuitry.
• PIN diode protection: Enhances transient voltage spike tolerance, improving circuit robustness in noisy industrial environments.
• Wide operating temperature range: Ensures reliable performance from -55 ??C to +200 ??C, suitable for military and aerospace applications.
• Low saturation voltage: Minimizes power loss during switching, improving system efficiency in power control applications.
• TO-18 hermetic metal can package: Offers excellent thermal conductivity and environmental protection for long-term reliability.

Typical Applications

• High voltage switching and driver circuits in industrial control systems, where the device??s high voltage rating and Darlington gain provide efficient control of power loads.
• Military and aerospace electronic systems requiring hermetic packaging and extended temperature tolerance for reliable operation under harsh conditions.
• Amplification stages in power regulation and interfacing circuits, benefiting from the device??s high current gain and low input drive.
• Transient voltage suppression in environments prone to electrical noise and surges, taking advantage of the integrated PIN diode for enhanced protection.

JAN2N6352P-Darlington-PIND Advantages vs Typical Alternatives

This device delivers superior high voltage handling and ultra-high current gain compared to standard transistors, reducing input drive complexity and improving switching efficiency. The integrated PIN diode structure enhances transient immunity, making it more reliable in noisy industrial or military environments. Its hermetic TO-18 package provides better thermal management and environmental protection, ensuring longer operational life versus plastic-packaged alternatives. These features combine to offer a robust, high-performance solution tailored for critical and high-reliability applications.

JAN2N6352P-Darlington