JAN2N6301P-Darlington-PIND Overview
The JAN2N6301P is a PNP Darlington transistor designed for high-gain switching and amplification applications. Featuring a robust PIND (Plastic In-line Dual) package, it offers reliable performance in industrial and military-grade electronics. This transistor supports collector currents up to 4A and operates at voltages up to 100V, making it suitable for demanding power control circuits. Its high current gain and low saturation voltage ensure efficient switching, reducing power loss and heat generation. Engineers and sourcing specialists will find this device optimal for applications requiring dependable amplification within compact, rugged packages. Available through IC Manufacturer.
JAN2N6301P-Darlington-PIND Key Features
- High Current Gain: Provides significant amplification, allowing control of large loads with minimal base current.
- Collector Current Rating up to 4A: Supports high-power applications requiring robust current handling capabilities.
- High Collector-Emitter Voltage (100V): Enables operation in circuits with elevated voltage demands, enhancing versatility.
- Low Saturation Voltage: Minimizes power dissipation during switching, improving overall energy efficiency and thermal management.
- Plastic In-line Dual (PIND) Package: Offers compact, durable housing suitable for automated assembly and harsh environments.
- Complementary PNP Configuration: Ideal for applications needing positive ground or switching on the high side of circuits.
- Military Standard JAN Prefix: Ensures enhanced reliability and quality assurance for critical applications.
JAN2N6301P-Darlington-PIND Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP Darlington | ?C |
| Collector-Emitter Voltage (VCEO) | 100 | V |
| Collector Current (IC) | 4 | A |
| Gain Bandwidth Product (fT) | ?C | MHz |
| DC Current Gain (hFE) | 7500 (typical) | ?C |
| Saturation Voltage (VCE(sat)) | 1.2 (max) | V |
| Package Type | PIND (Plastic In-line Dual) | ?C |
| Operating Temperature Range | -55 to +125 | ??C |
| Junction Temperature (TJ) | 150 | ??C |
| Base-Emitter Voltage (VBE(on)) | 2.5 (typical) | V |
JAN2N6301P-Darlington-PIND Advantages vs Typical Alternatives
This high-gain PNP Darlington transistor stands out with its ability to deliver up to 4A collector current at 100V, combined with low saturation voltage for efficient switching. Its JAN military standard certification guarantees enhanced reliability over commercial counterparts. The PIND package supports robust mounting and heat dissipation, favorable for industrial environments. These features collectively provide superior performance, durability, and integration ease compared to typical single transistors or non-military grade equivalents.
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Typical Applications
- Power switching circuits requiring high current gain and low saturation voltage, such as relay drivers and solenoid controls, benefiting from efficient load switching with minimal base drive.
- Audio amplification stages where linearity and gain stability are critical in compact form factors.
- Industrial control systems demanding rugged, reliable transistors for switching motors, lamps, or other inductive loads.
- Military and aerospace electronics where JAN standards ensure performance under harsh environmental conditions.
JAN2N6301P-Darlington-PIND Brand Info
The JAN2N6301P is part of the JAN series, a military-grade line of transistors recognized for stringent quality and reliability standards. Produced under controlled manufacturing processes, this device meets JAN (Joint Army-Navy) specifications for durability, ensuring consistent performance across demanding applications. Its brand legacy is rooted in delivering trusted components for defense, industrial, and aerospace sectors requiring dependable PNP Darlington transistors with verified electrical and thermal characteristics.
FAQ
What is the maximum collector current rating of the JAN2N6301P Darlington transistor?
The transistor supports a maximum collector current of 4 amperes, making it suitable for medium to high-power switching and amplification applications where robust current handling is essential.
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What package type does this transistor use and what are its benefits?
This device comes in a Plastic In-line Dual (PIND) package, which is compact and mechanically durable. The PIND package facilitates easy automated PCB assembly and effective heat dissipation, enhancing reliability in industrial environments.
How does the JAN2N6301P compare to standard transistors in terms of gain?
The device features a very high DC current gain, typically around 7500, which is significantly higher than standard single transistors. This high gain reduces the required base drive current, improving overall circuit efficiency.
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Can this transistor operate in high-temperature environments?
Yes, it is rated for an operating junction temperature up to 150??C and an ambient temperature range from -55??C to +125??C, suitable for demanding industrial and military applications with wide temperature variations.
Is the JAN2N6301P suitable for use in military or aerospace applications?
Absolutely. The JAN prefix indicates compliance with military standards, ensuring the transistor meets rigorous quality, performance, and reliability requirements necessary for aerospace and defense systems.
