JAN2N6301-Darlington Overview
The JAN2N6301-Darlington is a high-gain, silicon NPN Darlington transistor designed for industrial and military-grade applications. It offers a robust solution for amplification and switching with a collector-to-emitter voltage rating suitable for high-voltage circuits. Known for its low saturation voltage and high current gain, this transistor ensures efficient performance in demanding environments. Its hermetically sealed metal can package supports reliability in harsh conditions. Sourced from a trusted IC Manufacturer, this component balances power handling and durability for diverse electronic systems.
JAN2N6301-Darlington Key Features
- High DC current gain: Provides superior amplification, reducing the need for additional gain stages, which simplifies circuit design.
- Collector-emitter voltage (Vceo) of 100V: Enables operation in high-voltage switching applications, enhancing versatility.
- Low collector-emitter saturation voltage: Minimizes power dissipation, improving overall circuit efficiency and thermal management.
- Hermetically sealed metal can package: Ensures long-term reliability in extreme temperature and environmental conditions, critical for military and aerospace use.
JAN2N6301-Darlington Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Darlington Transistor |
| Maximum Collector-Emitter Voltage (Vceo) | 100 V |
| Maximum Collector Current (Ic) | 4 A |
| DC Current Gain (hFE) | Minimum 1000 |
| Collector-Emitter Saturation Voltage (Vce(sat)) | Typically 1.5 V at Ic = 3 A |
| Transition Frequency (fT) | Typically 8 MHz |
| Power Dissipation (Pd) | 75 W (with proper heat sinking) |
| Package Type | Hermetic metal can (TO-39) |
| Operating Junction Temperature (Tj) | -65??C to +200??C |
JAN2N6301-Darlington Advantages vs Typical Alternatives
This device provides a notable advantage in applications requiring high gain and high voltage tolerance with minimal power loss. Compared to typical bipolar transistors, it offers superior current amplification and reduced saturation voltage, which translates to improved efficiency and reliability. Its hermetic packaging further ensures enhanced longevity under extreme operating conditions, making it a preferred option for mission-critical and industrial electronics.
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Typical Applications
- High-current switching circuits where efficient amplification and low saturation voltage are essential for maintaining performance and reducing thermal stress.
- Industrial control systems requiring durable transistor solutions that can handle elevated voltage and current loads reliably.
- Military and aerospace electronics that demand rugged components with wide operating temperature ranges and hermetic sealing.
- Power amplification stages in analog signal processing where stable high gain and low distortion are necessary.
JAN2N6301-Darlington Brand Info
The JAN2N6301-Darlington is manufactured to meet stringent military (JAN) standards, ensuring high reliability and performance consistency. This transistor is part of a legacy series known for ruggedness and precision, making it a trusted choice for engineers sourcing components for high-reliability applications. The product??s construction and testing procedures align with defense and aerospace industry requirements, reflecting the brand??s commitment to durability and quality.
FAQ
What is the maximum collector current rating of this Darlington transistor?
The maximum collector current rating for this device is 4 Amperes. This allows it to handle substantial current loads in switching and amplification tasks without compromising performance.
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Can this transistor operate in high-temperature environments?
Yes, it supports an operating junction temperature range from -65??C up to +200??C, making it suitable for harsh environmental conditions common in industrial and military applications.
What is the significance of the hermetic metal can package?
The hermetic metal can package provides excellent protection against moisture, dust, and other environmental contaminants, ensuring long-term reliability and stable electrical characteristics even under extreme conditions.
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How does the low saturation voltage benefit circuit design?
A low collector-emitter saturation voltage reduces power losses and heat generation during operation, improving efficiency and enabling more compact thermal management solutions in the overall system design.
Is this transistor suitable for high-frequency applications?
While primarily designed for power amplification and switching, it features a transition frequency of around 8 MHz, which supports moderate high-frequency applications but may not be optimal for very high-frequency RF circuits.
