JAN2N6052-Transistor Overview
The JAN2N6052-Transistor is a robust NPN silicon power transistor designed to operate in high-voltage and high-current environments. Featuring a collector-emitter voltage rating of 400V and a continuous collector current of 8A, it is suitable for demanding switching and amplification applications. This transistor ensures reliable performance with a high gain bandwidth product and efficient thermal characteristics. Its complementary design and rugged construction make it an ideal choice for industrial power control circuits, motor drives, and power regulators. For detailed sourcing and technical support, visit the IC Manufacturer.
JAN2N6052-Transistor Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | NPN Silicon Power Transistor |
| Collector-Emitter Voltage (Vceo) | 400 V |
| Collector Current (Ic) | 8 A (continuous) |
| Power Dissipation (Pd) | 115 W (at 25??C) |
| Gain Bandwidth Product (fT) | ?? 5 MHz |
| Collector-Base Voltage (Vcbo) | 400 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| DC Current Gain (hFE) | 20 to 70 (at Ic = 3 A) |
| Operating Junction Temperature (Tj) | -65 ??C to +200 ??C |
JAN2N6052-Transistor Key Features
- High voltage tolerance: With a collector-emitter voltage rating of 400V, it supports high-voltage applications safely and reliably.
- High current capacity: The transistor handles continuous collector currents up to 8A, enabling it to drive power-intensive loads efficiently.
- Wide operating temperature range: Reliable operation from -65 ??C to +200 ??C supports harsh industrial environments and thermal stress.
- Robust power dissipation: Capable of dissipating 115W, it maintains performance under demanding power conditions, reducing the need for excessive cooling.
Typical Applications
- Industrial motor control circuits requiring high current switching and amplification for effective speed regulation and torque management.
- Power supply regulation and voltage stabilization systems where reliable high-voltage switching is essential.
- Audio amplifier output stages that benefit from high gain and power handling for clear signal reproduction.
- High-power switching applications including DC-DC converters and inverters where durability and thermal management are critical.
JAN2N6052-Transistor Advantages vs Typical Alternatives
This transistor offers superior high-voltage and high-current handling compared to many general-purpose transistors, enhancing system reliability in demanding power control roles. Its wide operating temperature range and strong power dissipation capability reduce thermal management complexity. The device??s consistent gain characteristics improve switching accuracy and efficiency, making it a reliable choice for industrial electronics where performance and durability are critical.
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JAN2N6052-Transistor Brand Info
The JAN2N6052 transistor is a military-grade silicon NPN power transistor originally produced under the Joint Army-Navy (JAN) standard, ensuring strict quality and reliability requirements for defense and aerospace applications. It is manufactured by established semiconductor producers specializing in high-reliability discrete components. The JAN prefix denotes compliance with military specifications, reflecting rigorous testing for temperature extremes, electrical performance, and mechanical durability. This device is commonly sourced for industrial and defense electronics where dependable power transistors are essential.
FAQ
What is the maximum collector-emitter voltage for the JAN2N6052 transistor?
The maximum collector-emitter voltage (Vceo) for this transistor is 400 volts. This high voltage rating enables its use in power circuits where large voltage swings occur, ensuring safe operation without breakdown.
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Can the transistor handle high continuous currents reliably?
Yes, it supports continuous collector currents up to 8 amperes, making it suitable for driving substantial loads in motor controls and power regulation applications without degradation under normal operating conditions.
What is the operating temperature range of this transistor?
The device operates reliably between -65 degrees Celsius and +200 degrees Celsius, accommodating extreme temperature environments typical in industrial and military applications.
