JAN2N6032-Transistor Overview
The JAN2N6032 transistor is a high-performance NPN bipolar junction transistor (BJT) designed for power amplification and switching applications. It features a high collector current rating and robust voltage handling capabilities, making it suitable for demanding industrial and military-grade environments. The device offers reliable electrical characteristics, ensuring consistent performance under thermal and electrical stress. Its construction meets stringent military standards, providing enhanced durability and stability. Engineers and sourcing specialists can rely on this transistor for applications requiring high gain, fast switching, and excellent power dissipation. For detailed sourcing and support, visit IC Manufacturer.
JAN2N6032-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (Vce) | 100 | Volts |
| Collector-Base Voltage (Vcb) | 100 | Volts |
| Emitter-Base Voltage (Veb) | 5 | Volts |
| Collector Current (Ic) | 10 | Amperes |
| Power Dissipation (Ptot) | 75 | Watts |
| DC Current Gain (hFE) | 40 to 160 | (typical) |
| Transition Frequency (fT) | 3 | MHz |
| Operating Junction Temperature (Tj) | 200 | ??C |
JAN2N6032-Transistor Key Features
- High voltage capability: Supports collector-emitter voltages up to 100V, enabling use in high-voltage switching circuits with confidence.
- Robust collector current rating: Handles continuous collector currents of up to 10A, suitable for power amplification and load driving in industrial applications.
- Wide DC current gain range: Offers flexibility with hFE values ranging from 40 to 160, allowing precise gain control for various circuit designs.
- High power dissipation: With a maximum power dissipation of 75W, it ensures reliable operation under significant thermal loads.
- Military-grade construction: Built to meet stringent JAN (Joint Army-Navy) standards for enhanced durability and reliability in harsh environments.
- High operating temperature: Rated to operate up to 200??C junction temperature, supporting elevated temperature applications without degradation.
- Fast switching capabilities: Transition frequency of 3 MHz supports efficient operation in moderate frequency power switching and amplification tasks.
Typical Applications
- Power amplification stages in industrial control and communication equipment, where high current and voltage handling are essential for reliable signal processing.
- Switching regulators and power supplies requiring robust transistors capable of managing significant power dissipation and thermal stress.
- Motor control circuits and solenoid drivers in automation systems, leveraging the transistor??s high current capacity and voltage tolerance.
- Military and aerospace electronic systems demanding rugged components that meet strict JAN standards for performance and reliability in extreme conditions.
JAN2N6032-Transistor Advantages vs Typical Alternatives
This transistor offers superior power handling and voltage ratings compared to many standard BJTs, making it ideal for industrial and military applications requiring robustness and reliability. Its wide current gain range and high power dissipation capability provide design flexibility and thermal stability that typical transistors may lack. The JAN certification further ensures compliance with stringent quality and durability standards, distinguishing it from commercial-grade alternatives.
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JAN2N6032-Transistor Brand Info
The JAN2N6032 is produced under the Joint Army-Navy (JAN) specification, indicating compliance with military-grade quality and reliability standards. This transistor is typically sourced from manufacturers specializing in defense and industrial components, ensuring rigorous testing and traceability. The JAN marking signifies enhanced screening and environmental testing processes that guarantee performance under extreme conditions, making it a trusted choice for engineers designing mission-critical and high
