JAN2N5681-Transistor by JAN | High-Speed Switching Transistor | TO-18 Package

  • This transistor switches and amplifies electrical signals, enabling efficient control in various circuits.
  • Its voltage rating supports stable operation under demanding conditions, ensuring consistent performance.
  • The compact package minimizes board space, facilitating design in tight or portable electronic devices.
  • Ideal for use in power regulation circuits, it enhances system stability and responsiveness.
  • Manufactured to meet standard quality controls, it delivers dependable operation over extended periods.
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JAN2N5681-Transistor Overview

The JAN2N5681-Transistor is a robust NPN bipolar junction transistor designed for high-voltage switching and amplification applications. Known for its reliable performance under demanding conditions, this transistor supports collector-to-emitter voltages up to 160V, making it suitable for industrial and military-grade electronics. It offers a maximum collector current of 1A and a power dissipation rating that ensures stable operation in various environments. Its standardized JAN (Joint Army-Navy) qualification guarantees consistent manufacturing quality and long-term reliability. This device is available from IC Manufacturer, offering engineers and sourcing specialists a dependable solution for precision switching and amplification tasks.

JAN2N5681-Transistor Key Features

  • High voltage capability: With a collector-emitter voltage rating of 160V, the transistor excels in handling high-voltage circuits safely and efficiently.
  • Moderate collector current: Supports up to 1A continuous collector current, enabling its use in medium-power switching and amplification.
  • Military-grade JAN qualification: Ensures enhanced reliability and ruggedness for harsh industrial and defense applications.
  • Low power dissipation: Rated at 800mW, which contributes to stable thermal management and improved operational lifespan.

JAN2N5681-Transistor Technical Specifications

Parameter Value Unit
Transistor Type NPN Bipolar Junction ?C
Collector-Emitter Voltage (Vceo) 160 V
Collector-Base Voltage (Vcbo) 160 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) 1 A
Power Dissipation (Ptot) 800 mW
DC Current Gain (hFE) 30 to 300 ?C
Transition Frequency (fT) 100 MHz
Junction Temperature (Tj) 200 ??C

JAN2N5681-Transistor Advantages vs Typical Alternatives

This transistor offers superior high-voltage handling and robust military-grade certification, making it more reliable and consistent than many commercial equivalents. Its broad current gain range and moderate power dissipation support efficient amplification and switching with less thermal stress, enhancing overall circuit stability and longevity in industrial and defense systems.

Typical Applications

  • High-voltage switching circuits requiring reliable NPN transistors with robust voltage and current ratings, common in industrial control systems.
  • Signal amplification in analog circuits where stable gain and frequency response are critical for performance.
  • Military and aerospace electronics benefiting from the JAN qualification??s proven ruggedness and reliability.
  • Power regulation and driver circuits in embedded systems that demand consistent transistor characteristics under variable load conditions.

JAN2N5681-Transistor Brand Info

The JAN2N5681-Transistor is a military-standard device produced under stringent JAN (Joint Army-Navy) specifications, ensuring high quality and reliability. This transistor is manufactured to meet exacting defense and industrial requirements, providing engineers with confidence in performance consistency and durability. Its production follows rigorous testing protocols to deliver dependable results in complex and mission-critical applications.

FAQ

What does the JAN prefix indicate for this transistor?

The JAN prefix signifies that the transistor complies with Joint Army-Navy specifications, which means it has undergone strict testing for reliability, quality, and performance suitable for military and aerospace use, ensuring ruggedness and consistency under demanding conditions.

What is the maximum collector current this transistor can handle?

This transistor can handle a continuous collector current of up to 1 ampere, making it suitable for medium-power switching and amplification tasks in various high-reliability applications.

Can this transistor operate at high frequencies?

Yes, with a transition frequency (fT) of approximately 100 MHz, this device supports moderate to high-frequency operation, suitable for many analog and switching applications requiring efficient signal processing.

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What is the maximum power dissipation rating and why is it important?

The transistor??s maximum power dissipation is rated at 800 milliwatts. This rating is critical to ensure that the device does not overheat during operation, maintaining reliability and preventing premature failure in high-stress circuits.

In what types of circuits is this transistor typically used?

Typical applications include high-voltage switching, signal amplification, power regulation, and military or aerospace electronic systems where enhanced reliability and performance consistency are required.

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