JAN2N5679-Transistor Overview
The JAN2N5679-Transistor is a high-performance NPN bipolar junction transistor (BJT) designed for industrial and aerospace applications requiring robust switching and amplification capabilities. Engineered with stringent military specifications, this transistor offers excellent gain characteristics, high voltage tolerance, and reliable operation across a broad temperature range. Its durable construction ensures consistent performance in demanding environments, making it ideal for precision electronic circuits and control systems. For detailed specifications and sourcing, visit IC Manufacturer.
JAN2N5679-Transistor Key Features
- High collector-emitter voltage rating: Enables operation in circuits requiring up to 100V, ensuring compatibility with high-voltage industrial systems.
- Moderate continuous collector current: Supports currents up to 0.8A, providing reliable switching and amplification in medium-power applications.
- High current gain (hFE): Delivers consistent gain from 40 to 160, enhancing signal amplification accuracy and circuit stability.
- Wide operating temperature range: Designed for -55??C to +125??C, suitable for harsh operating environments common in aerospace and defense sectors.
- Military-grade quality (JAN specification): Guarantees rigorous screening and reliability, critical for mission-critical applications.
- Low noise figure: Supports low-noise amplification needed in sensitive electronic systems.
- Standard TO-18 metal can package: Provides excellent thermal dissipation and mechanical durability for rugged industrial use.
JAN2N5679-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN Bipolar Junction | ?C |
| Collector-Emitter Voltage (VCEO) | 100 | Volts |
| Collector-Base Voltage (VCBO) | 100 | Volts |
| Emitter-Base Voltage (VEBO) | 5 | Volts |
| Continuous Collector Current (IC) | 0.8 | Amps |
| DC Current Gain (hFE) | 40 to 160 | ?C |
| Transition Frequency (fT) | 80 | MHz |
| Operating Temperature Range | -55 to +125 | ??C |
| Package Type | TO-18 Metal Can | ?C |
JAN2N5679-Transistor Advantages vs Typical Alternatives
This transistor offers superior voltage handling and a wide gain range compared to standard commercial transistors, making it highly reliable in high-voltage and high-temperature environments. Its military-grade qualification ensures enhanced durability and consistent electrical characteristics, providing engineers with confidence for critical industrial and aerospace applications. Additionally, the metal can package improves thermal management, reducing failure rates in harsh operating conditions.
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Typical Applications
- Signal amplification in aerospace and defense electronic circuits where reliability and precision gain are crucial for system performance.
- Switching applications in industrial control systems requiring stable operation under elevated voltage and temperature stresses.
- Low-noise amplification stages in communication equipment and instrumentation demanding minimized signal distortion.
- General-purpose medium power amplification where ruggedness and military-grade quality are prerequisites.
JAN2N5679-Transistor Brand Info
The JAN2N5679-Transistor is part of a series of military-grade transistors produced under the JAN (Joint Army-Navy) specification standard. This product line is recognized for its stringent testing and reliability criteria, designed to meet the exacting requirements of aerospace, defense, and industrial sectors. The brand emphasizes durability, consistent electrical performance, and adherence to high-quality manufacturing processes, making it a trusted choice among engineers and sourcing specialists.
FAQ
What is the maximum collector-emitter voltage for this transistor?
The maximum collector-emitter voltage is rated at 100 volts, ensuring the transistor can safely operate in circuits with relatively high voltage requirements without risk of breakdown.
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Can this transistor operate in extreme temperature conditions?
Yes, it is specified to operate reliably within a temperature range of -55??C to +125??C, making it suitable for harsh industrial and aerospace environments.
What type of package does the transistor come in, and why is it important?
The device is housed in a TO-18 metal can package, which provides excellent thermal dissipation and mechanical robustness, enhancing reliability in demanding applications.
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What is the typical current gain (hFE) range for this transistor?
The typical DC current gain ranges from 40 to 160, allowing for flexible design use in amplification stages requiring moderate to high gain levels.
Is this transistor suitable for low-noise applications?
Yes, its low noise figure makes it appropriate for use in sensitive signal amplification circuits such as communication and instrumentation systems.
