JAN2N5667-Transistor Overview
The JAN2N5667 transistor is a high-performance bipolar junction transistor (BJT) designed for amplification and switching applications in demanding industrial environments. It features a robust construction with a TO-18 metal can package, ensuring excellent thermal stability and mechanical durability. This transistor offers a high collector current capability and reliable gain characteristics, making it suitable for precision analog circuits and power switching tasks. Engineered to meet military standards, it guarantees consistent performance under harsh conditions. For engineers and sourcing specialists seeking dependable transistor solutions, the JAN2N5667 provides a balance of durability, efficiency, and electrical performance. More details available at IC Manufacturer.
JAN2N5667-Transistor Key Features
- High collector current capability: Supports up to 600 mA collector current, enabling efficient power handling in switching applications.
- Low collector-emitter saturation voltage: Ensures minimal power loss and improved efficiency in amplification circuits.
- Robust TO-18 metal can package: Provides enhanced thermal dissipation and mechanical reliability for extended operational life.
- Wide voltage ratings: With a collector-emitter voltage rating of 40 V, it supports a broad range of circuit designs.
JAN2N5667-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 40 | V |
| Collector-Base Voltage (VCBO) | 60 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 600 | mA |
| Power Dissipation (Ptot) | 625 | mW |
| DC Current Gain (hFE) | 40 to 160 | ?C |
| Transition Frequency (fT) | 50 | MHz |
| Package Type | TO-18 Metal Can | ?C |
JAN2N5667-Transistor Advantages vs Typical Alternatives
This transistor excels compared to typical alternatives by combining a robust metal can package with a high collector current rating and low saturation voltage. Its military-grade reliability ensures stable operation in challenging environments, providing superior thermal management and mechanical strength. These advantages lead to enhanced system longevity and efficiency, making it a preferred choice for precision analog and power switching applications in industrial settings.
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Typical Applications
- Industrial signal amplification circuits requiring stable gain and high current handling for robust performance in control systems.
- Switching regulators and power control modules where low saturation voltage reduces power loss and heat generation.
- Military and aerospace electronics demanding high reliability and durable packaging for operation under extreme environmental conditions.
- General-purpose switching in automation equipment, enabling efficient control of actuators and relays.
JAN2N5667-Transistor Brand Info
The JAN2N5667 transistor is part of a series of military-grade bipolar transistors produced under strict quality controls to meet or exceed MIL-STD-883 standards. The brand emphasizes rigorous testing and certification to ensure each device delivers reliable performance in harsh industrial and defense environments. This product is recognized for its consistent electrical characteristics, durability, and suitability for critical applications where failure is not an option.
FAQ
What is the maximum collector current of the JAN2N5667 transistor?
The maximum continuous collector current is 600 mA, allowing the device to handle moderate power loads in switching and amplification circuits without degradation.
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What package type does this transistor come in, and why is it beneficial?
This transistor is housed in a TO-18 metal can package, which provides improved thermal dissipation and mechanical strength compared to plastic packages, enhancing reliability especially in demanding environments.
What voltage ratings are specified for the transistor?
It has a collector-emitter voltage rating of 40 V, a collector-base voltage of 60 V, and an emitter-base voltage of 5 V, supporting a wide range of circuit designs with adequate voltage headroom.
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How does the device perform in terms of gain and frequency response?
The transistor offers a DC current gain (hFE) ranging from 40 to 160 and a transition frequency (fT) of 50 MHz, making it suitable for moderate-frequency amplification with reliable gain characteristics.
Is the JAN2N5667 suitable for military or aerospace applications?
Yes, this transistor meets military standards, ensuring high reliability and performance under extreme environmental conditions, which makes it appropriate for aerospace and defense electronics.
