JAN2N5666S-Transistor by JAN | High-Power NPN Transistor | TO-220 Package

  • This transistor amplifies electrical signals, enabling efficient switching in electronic circuits.
  • Its voltage rating supports stable operation under varying electrical loads, ensuring consistent performance.
  • The compact package type reduces board space, facilitating easier integration into dense circuit designs.
  • Ideal for use in power regulation modules, it helps maintain precise control and energy efficiency.
  • Manufactured to meet industry standards, it offers dependable reliability for long-term use.
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产品上方询盘

JAN2N5666S-Transistor Overview

The JAN2N5666S is a high-performance NPN bipolar junction transistor designed for robust switching and amplification in industrial and military-grade electronics. Optimized for reliability under demanding conditions, it features a rugged construction that ensures stable operation at high voltages and currents. This transistor is suitable for applications requiring fast switching speeds, high gain, and excellent thermal stability. Its construction aligns with stringent military standards, making it ideal for aerospace, defense, and industrial control systems. Available from IC Manufacturer, the device meets critical quality and durability requirements for professional-grade electronic designs.

JAN2N5666S-Transistor Key Features

  • High Current Handling: Supports collector current up to 10A, enabling robust power switching in demanding circuits.
  • Elevated Voltage Ratings: Collector-Emitter voltage up to 100V ensures compatibility with high-voltage applications and enhances device versatility.
  • Superior Gain Characteristics: DC current gain (hFE) range between 20 to 70 allows for efficient signal amplification and switching.
  • Military-Grade Construction: Encapsulation and material choices meet JAN (Joint Army-Navy) standards, providing enhanced reliability and longevity in harsh environments.

JAN2N5666S-Transistor Technical Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 100 V
Collector-Base Voltage VCBO 120 V
Emitter-Base Voltage VEBO 5 V
Collector Current (Continuous) IC 10 A
Power Dissipation (Total) PTOT 75 W
DC Current Gain hFE 20 to 70 ??
Transition Frequency fT ?? MHz
Operating Temperature Range Top -65 to +200 ??C
Storage Temperature Range Tstg -65 to +200 ??C

JAN2N5666S-Transistor Advantages vs Typical Alternatives

This transistor stands out by combining high voltage and current ratings with military-grade ruggedness, offering superior reliability and durability compared to standard commercial transistors. Its wide operating temperature range and strict quality controls ensure dependable performance in extreme environments. The device??s efficient gain and power handling capabilities reduce the need for additional cooling or complex circuitry, providing a compact and cost-effective solution for industrial and aerospace applications.

Typical Applications

  • High-power switching circuits in military and aerospace systems requiring reliable operation under harsh conditions and wide temperature variations.
  • Industrial motor control applications where sustained high current and voltage tolerance are critical.
  • Amplification stages in ruggedized communication and radar equipment, benefiting from its stable gain and low noise characteristics.
  • Power regulation and voltage stabilization circuits where long-term durability and thermal stability are essential.

JAN2N5666S-Transistor Brand Info

The JAN2N5666S transistor is manufactured under strict Joint Army-Navy (JAN) standards, ensuring superior quality and reliability for defense and aerospace applications. This product is designed to meet the rigorous demands of military specifications, including enhanced mechanical robustness and thermal endurance. Its production follows stringent testing procedures to guarantee performance consistency in mission-critical environments. As a trusted choice in high-reliability sectors, this transistor reflects the manufacturer??s commitment to excellence in semiconductor technology.

FAQ

What is the maximum collector current allowed for this transistor?

The maximum continuous collector current rating for this transistor is 10 amperes. This allows it to handle high-power switching and amplification tasks in industrial and military-grade applications without risk of damage.

Can this transistor operate at high temperatures?

Yes, it supports an operating temperature range from -65??C up to +200??C. This wide range ensures reliable performance in extreme environmental conditions often encountered in aerospace and defense systems.

What voltage levels can this transistor safely handle?

The device is rated for a collector-emitter voltage of up to 100 volts and a collector-base voltage up to 120 volts, making it suitable for high-voltage applications and providing ample margin for most industrial circuits.

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产品中间询盘

Is this transistor suitable for signal amplification?

Yes, the DC current gain ranges from 20 to 70, which supports efficient signal amplification. Its low noise and stable gain characteristics make it appropriate for use in communication equipment and other amplification stages.

What makes this transistor compliant with military standards?

The transistor is manufactured following JAN (Joint Army-Navy) standards, which include rigorous testing for mechanical durability, electrical performance, and thermal stability. This compliance ensures reliability under demanding conditions typical of military and aerospace environments.

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