JAN2N5665-Transistor by JAN | High-Power Switching Transistor | TO-220 Package

  • Designed to amplify or switch electronic signals, improving circuit control and performance reliability.
  • Features a key electrical characteristic that ensures efficient current handling for stable operation.
  • The compact package reduces board space, enabling dense component placement in tight designs.
  • Ideal for use in signal amplification within audio or communication devices, enhancing clarity and responsiveness.
  • Manufactured under strict quality standards to ensure consistent performance and long-term durability.
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产品上方询盘

JAN2N5665-Transistor Overview

The JAN2N5665 is a high-performance NPN bipolar junction transistor designed for reliable operation in industrial and military applications. Featuring a robust voltage rating and capable of handling significant collector current, it ensures stable amplification and switching in demanding environments. Its rugged construction meets military standards, making it suitable for circuits requiring durability and long-term dependability. Engineers and sourcing specialists benefit from its consistent electrical characteristics and compatibility with a wide range of electronic designs. For trusted supply and detailed specifications, visit IC Manufacturer.

JAN2N5665-Transistor Key Features

  • High voltage capability: With a collector-emitter voltage rating of 60V, it supports high-voltage switching applications, enhancing circuit robustness.
  • Substantial collector current: The device can handle up to 5A collector current, enabling efficient power control in demanding loads.
  • Military-grade reliability: Built to JAN (Joint Army-Navy) specifications, it offers excellent thermal and mechanical stability for harsh environments.
  • Low saturation voltage: Ensures reduced power loss during switching, improving overall circuit efficiency and thermal management.

JAN2N5665-Transistor Technical Specifications

Parameter Specification Unit
Transistor Type NPN Bipolar Junction ?C
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 5 A
Power Dissipation (Ptot) 30 W
DC Current Gain (hFE) 30 to 90 ?C
Transition Frequency (fT) 100 MHz
Operating Temperature Range -65 to +200 ??C

JAN2N5665-Transistor Advantages vs Typical Alternatives

This transistor stands out due to its military-grade construction and high collector current capacity, which surpass many standard commercial transistors. Its wide operating temperature range and low saturation voltage contribute to higher efficiency and reliability in critical applications. These features make it a preferred choice when precision, ruggedness, and long-term stability are paramount compared to typical industrial-grade transistors.

Typical Applications

  • Power amplification circuits in industrial control systems where high current and voltage handling are essential for consistent performance and reliability.
  • Switching regulators requiring efficient, high-speed transistor operation under varying load conditions.
  • Military and aerospace electronics demanding components with strict quality standards and durability under extreme environmental stresses.
  • General-purpose amplification and switching tasks in automated systems and instrumentation.

JAN2N5665-Transistor Brand Info

The JAN2N5665 is manufactured under stringent Joint Army-Navy (JAN) standards, ensuring compliance with military specifications for quality, performance, and reliability. This transistor model is part of a series known for ruggedness and consistency, favored by defense contractors and industrial engineers alike. Its design and testing protocols guarantee dependable operation in mission-critical applications where failure is not an option.

FAQ

What is the maximum collector current rating of the JAN2N5665 transistor?

The maximum collector current for this transistor is 5 amperes. This rating allows it to handle significant loads, making it suitable for power switching and amplification tasks in industrial and military circuits.

Can the JAN2N5665 operate at high temperatures?

Yes, it supports an operating temperature range from -65??C up to +200??C, ensuring reliable performance in extreme thermal environments commonly encountered in aerospace and defense applications.

What voltage levels can the transistor safely withstand?

The device can handle up to 60 volts between collector and emitter and collector and base terminals, with an emitter-base voltage maximum of 5 volts, providing robustness for high-voltage switching operations.

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产品中间询盘

Is this transistor suitable for high-frequency applications?

With a transition frequency (fT) of 100 MHz, this transistor can operate efficiently in moderately high-frequency circuits, making it versatile for various amplification and switching roles.

What standards does the JAN2N5665 comply with?

This transistor complies with JAN (Joint Army-Navy) military standards, ensuring rigorous quality control, durability, and performance consistency required in defense and industrial sectors.

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