JAN2N5664P-Transistor-PIND Overview
The JAN2N5664P is a high-performance PNP transistor designed specifically for use in photoinduced noise detection (PIND) applications. It features robust electrical characteristics suitable for reliable switching and amplification in industrial and military-grade environments. This transistor offers stable operation under varied temperature ranges and ensures consistent signal integrity, making it ideal for precision sensing and control systems. Engineered for durability and efficiency, it supports demanding applications with low noise and high gain. For more detailed information and sourcing, visit IC Manufacturer.
JAN2N5664P-Transistor-PIND Key Features
- High Gain Capability: Provides a current gain (hFE) sufficient for amplifying weak signals, enhancing detection sensitivity in PIND systems.
- Low Noise Performance: Reduces signal distortion, critical for accurate noise detection and precise measurement in industrial environments.
- Wide Operating Temperature Range: Ensures stable transistor operation from -55??C to +125??C, supporting reliable performance in harsh conditions.
- Robust Packaging: Encapsulated in a hermetically sealed TO-18 metal can package, offering superior protection against environmental contamination and mechanical stress.
JAN2N5664P-Transistor-PIND Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | PNP |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector Current (IC) | 600 mA |
| Gain Bandwidth Product (fT) | 100 MHz (typical) |
| DC Current Gain (hFE) | 40 to 160 |
| Package Type | TO-18 Metal Can |
| Operating Temperature Range | -55??C to +125??C |
| Noise Figure | Low (specific dB values per datasheet) |
| Power Dissipation | 1 W (max) |
JAN2N5664P-Transistor-PIND Advantages vs Typical Alternatives
This transistor offers enhanced sensitivity and low noise characteristics compared to standard PNP transistors, making it especially suitable for precision noise detection tasks. Its hermetically sealed metal package improves reliability and environmental resistance over plastic-encapsulated alternatives. Additionally, the wide operating temperature range ensures consistent performance in industrial and military conditions, providing greater robustness and operational stability.
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Typical Applications
- Photoinduced Noise Detection (PIND) Equipment: Utilized to amplify low-level signals in devices that detect transient or induced noise, ensuring accurate fault analysis and quality control.
- Signal Amplification: Ideal for general-purpose amplification where low noise and reliability are critical.
- Industrial Control Systems: Supports switching and sensing functions in harsh environments requiring durable semiconductor components.
- Military and Aerospace Electronics: Suitable for precision applications demanding stable operation under extreme temperature and mechanical stress.
JAN2N5664P-Transistor-PIND Brand Info
The JAN2N5664P transistor is a military-grade component recognized for its stringent quality standards and reliability. Designed and manufactured to meet rigorous specifications, this device is trusted in demanding industrial and defense applications. Its heritage in high-reliability environments underscores its suitability for complex electronic systems requiring consistent performance and long operational life.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current for this device is 600 milliamperes (mA). This rating defines the highest continuous current the transistor can safely handle without damage under specified operating conditions.
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Can this transistor operate in extreme temperature environments?
Yes, the JAN2N5664P supports an operating temperature range from -55??C to +125??C, making it suitable for use in harsh environments such as industrial and military applications where temperature extremes are common.
What type of package does this transistor use and why is it important?
This transistor is housed in a TO-18 metal can package, which provides hermetic sealing. This packaging protects the device from moisture, contaminants, and mechanical stresses, enhancing reliability and longevity.
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How does the low noise characteristic benefit applications?
Low noise performance reduces signal distortion and interference, which is crucial in precision detection and amplification tasks. This ensures accurate signal processing in sensitive measurement and control systems.
Is this transistor suitable for general-purpose amplification?
Yes, while optimized for PIND applications, the transistor??s gain and frequency characteristics also make it effective for general-purpose amplification where low noise and reliability are required.
