JAN2N5581-Transistor Overview
The JAN2N5581 transistor is a robust PNP silicon bipolar junction transistor (BJT) designed for medium power amplifier and switching applications. Featuring a collector-base voltage rating of up to 60V and a collector current capacity of 3A, this device offers reliable performance under demanding conditions. Its complementary design supports linear and switching circuits, making it well suited for industrial and military-grade electronics. Manufactured to stringent military standards, the JAN2N5581 ensures consistent electrical characteristics and superior durability. For sourcing and technical specifications, consult IC Manufacturer.
JAN2N5581-Transistor Key Features
- High Collector Current: Supports up to 3A continuous collector current, enabling efficient handling of moderate power loads.
- Voltage Handling Capability: Collector-Base voltage rating of 60V allows for versatility in a range of amplifier and switching circuits.
- Military-Grade Reliability: Manufactured to JAN (Joint Army-Navy) specifications, ensuring consistent quality and performance in harsh environments.
- Complementary Transistor Pairing: Designed to complement NPN devices for push-pull amplifier circuits, enhancing linearity and efficiency.
JAN2N5581-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP Silicon BJT | ?C |
| Collector-Base Voltage (VCBO) | 60 | V |
| Collector-Emitter Voltage (VCEO) | 50 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 3 | A |
| Power Dissipation (PC) | 30 | W |
| DC Current Gain (hFE) | 40 to 320 | ?C |
| Transition Frequency (fT) | 30 | MHz |
| Operating Temperature Range | -65 to +200 | ??C |
JAN2N5581-Transistor Advantages vs Typical Alternatives
This transistor stands out by offering a high current capacity combined with a robust voltage rating, making it ideal for demanding industrial and military applications. Its rigorous JAN certification guarantees enhanced reliability and consistency compared to commercial-grade transistors. The wide operating temperature range and strong gain characteristics provide stable performance where precision and durability are critical, outperforming many standard PNP alternatives in reliability and thermal endurance.
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Typical Applications
- Medium power linear amplifiers requiring stable gain and high collector current in industrial and military-grade systems.
- Switching circuits where high voltage and current handling with fast switching times are necessary.
- Push-pull amplifier configurations paired with complementary NPN transistors for improved efficiency and sound quality.
- General-purpose amplification and switching in rugged environments demanding MIL-SPEC certified components.
JAN2N5581-Transistor Brand Info
The JAN2N5581 transistor is produced under the JAN (Joint Army-Navy) standard, reflecting a legacy of military specification compliance. This ensures the device meets strict quality and performance criteria required for defense and aerospace sectors. The brand reputation underscores reliability and long-term performance in severe operating conditions, making it a trusted choice for engineers and sourcing specialists working on mission-critical electronics.
FAQ
What is the maximum collector current rating of this transistor?
The transistor supports a maximum continuous collector current of 3 amperes, allowing it to handle moderate power loads effectively in both amplifier and switching applications.
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Can this transistor operate at high temperatures?
Yes, it is designed to operate within a temperature range from -65??C up to +200??C, making it suitable for harsh environments and applications requiring thermal stability.
Is the JAN2N5581 suitable for switching applications?
Absolutely. With its voltage ratings and current capacity, this transistor is well suited for switching circuits where reliable operation under load and voltage stress is necessary.
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What does the JAN designation indicate for this transistor?
The JAN prefix indicates that the transistor meets military standards for quality and reliability, ensuring consistent performance in critical and demanding applications.
How does the current gain vary across the device specifications?
The DC current gain (hFE) ranges between 40 and 320, providing flexibility in circuit design and allowing engineers to select devices with gain characteristics that best suit their application needs.
