JAN2N5416S-Transistor Overview
The JAN2N5416S is a high-voltage NPN silicon transistor designed for robust switching and amplification in industrial and military-grade applications. Featuring a collector-emitter voltage rating of 100V and a collector current capacity of up to 3A, this transistor is engineered for demanding environments requiring reliable performance and long-term stability. Its JAN (Joint Army-Navy) designation indicates compliance with stringent military standards, ensuring enhanced durability and quality control. Ideal for power regulation, motor control, and signal amplification, this transistor delivers efficient operation across a wide temperature range. For detailed product sourcing and technical support, visit IC Manufacturer.
JAN2N5416S-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Silicon |
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 3 A (Continuous) |
| Power Dissipation (Ptot) | 30 W |
| DC Current Gain (hFE) | 20 to 70 |
| Transition Frequency (fT) | 3 MHz (Typical) |
| Operating Junction Temperature | -65??C to +200??C |
JAN2N5416S-Transistor Key Features
- High voltage tolerance: Supports up to 100V collector-emitter voltage, enabling use in high-voltage switching and amplification circuits.
- Robust current capacity: Handles continuous collector currents of 3A, beneficial for power regulation and motor control applications.
- Wide operating temperature range: Rated for junction temperatures from -65??C to +200??C, ensuring reliable performance in harsh environments.
- JAN military grade compliance: Meets rigorous military standards for quality and durability, essential for mission-critical aerospace and defense systems.
- Moderate gain and frequency: Offers a DC current gain between 20 and 70 and a typical transition frequency of 3 MHz, supporting steady-state amplification and switching.
Typical Applications
- Power switching and regulation in industrial control systems, where high voltage and current handling are essential.
- Motor drive circuits requiring robust transistor switching to manage inductive loads and maintain efficiency.
- Signal amplification stages in communication and radar equipment, leveraging the transistor??s stable gain characteristics.
- Military and aerospace electronic assemblies demanding components with verified reliability and extended temperature range tolerance.
JAN2N5416S-Transistor Advantages vs Typical Alternatives
This transistor offers distinct advantages over standard commercial alternatives due to its JAN military-grade certification, guaranteeing superior reliability and consistency. Its high voltage and current ratings allow it to perform efficiently in demanding power applications. The broad operating temperature range ensures stable operation across extreme conditions, making it ideal for aerospace and defense sectors. Compared to generic transistors, this device provides enhanced durability and predictable performance essential for mission-critical electronics.
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JAN2N5416S-Transistor Brand Info
The JAN2N5416S transistor is manufactured under strict military standards, often associated with legacy semiconductor producers specializing in defense and aerospace components. The JAN prefix denotes compliance with the Joint Army-Navy specification, reflecting rigorous testing and superior reliability. Devices bearing this designation are typically sourced from trusted manufacturers with histories of supplying components for high-reliability applications. This product is widely respected in the electronics industry for its dependable performance and long service life in harsh operating environments.
FAQ
What is the maximum collector current for this transistor?
The transistor can handle a continuous collector current of up to 3 amperes, which makes it suitable for medium-power switching and
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