JAN2N5339-Transistor Overview
The JAN2N5339 transistor is a high-performance silicon NPN bipolar junction transistor designed for medium power amplification and switching applications. Engineered to meet military specifications, this robust component offers reliable operation under demanding environmental conditions. With a maximum collector current of 8A and a collector-emitter voltage rating of 100V, it supports a broad range of industrial and defense electronics. The device features excellent gain characteristics and thermal stability, making it ideal for use in power amplifiers, driver stages, and switching circuits. For sourcing and technical data, visit IC Manufacturer.
JAN2N5339-Transistor Key Features
- High Collector Current Capability: Supports up to 8A, allowing efficient handling of medium power loads without degradation.
- Robust Voltage Ratings: With a maximum collector-emitter voltage of 100V, it reliably operates in high-voltage switching and amplification circuits.
- Military-Grade Reliability: Built to JAN (Joint Army-Navy) standards, ensuring superior performance under harsh environmental conditions and extended temperature ranges.
- Excellent Gain Performance: Offers a DC current gain (hFE) typically between 40 and 200, enabling effective signal amplification and control.
- Thermal Stability: Features a maximum junction temperature of 200??C, helping maintain performance and reliability in thermally demanding applications.
- Low Saturation Voltage: Minimizes power loss during switching, enhancing overall circuit efficiency.
- TO-3 Metal Can Package: Provides superior heat dissipation and mechanical protection, facilitating integration into industrial assemblies.
JAN2N5339-Transistor Technical Specifications
| Parameter | Value |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector-Base Voltage (VCBO) | 120 V |
| Emitter-Base Voltage (VEBO) | 7 V |
| Collector Current (IC) | 8 A (continuous) |
| Power Dissipation (Ptot) | 115 W (max) |
| DC Current Gain (hFE) | 40 to 200 |
| Transition Frequency (fT) | 3 MHz (typical) |
| Maximum Junction Temperature (Tj) | 200 ??C |
| Package | TO-3 Metal Can |
JAN2N5339-Transistor Advantages vs Typical Alternatives
This transistor offers superior power handling and voltage ratings compared to many standard NPN devices, ensuring high reliability in industrial and military environments. Its military-grade certification guarantees consistent performance under extreme conditions, while the robust TO-3 package enhances heat dissipation and mechanical durability. These advantages translate into improved system efficiency, longer operational life, and reduced failure rates compared to typical commercial transistors.
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Typical Applications
- Power Amplification Stages: Ideal for medium power audio and RF amplifiers requiring stable gain and high current capacity.
- Switching Circuits: Suited for industrial control systems where high voltage and current switching is essential.
- Military Electronics: Designed for defense applications demanding ruggedness and compliance with stringent military standards.
- Power Supply Regulation: Effective in linear regulators and power management circuits due to its thermal robustness and gain properties.
JAN2N5339-Transistor Brand Info
The JAN2N5339 transistor is manufactured under the JAN (Joint Army-Navy) specification framework, which certifies components for military and aerospace use. This ensures rigorous quality control and enhanced reliability. The transistor is provided by trusted suppliers specializing in high-quality discrete semiconductor devices, offering engineers a dependable solution for critical and high-stress applications requiring superior electrical and thermal performance.
FAQ
What is the maximum operating voltage of the JAN2N5339 transistor?
The device is rated for a maximum collector-emitter voltage (VCEO) of 100 volts, enabling it to safely operate in circuits requiring medium to high voltage handling capability without risk of breakdown.
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Can this transistor be used in high-temperature environments?
Yes, the transistor supports a maximum junction temperature up to 200??C, making it suitable for applications where elevated thermal conditions are present, such as power amplifiers or industrial switching circuits.
What package type does this transistor come in and why does it matter?
This component is housed in a TO-3 metal can package, which provides excellent thermal dissipation and robust mechanical protection, critical for maintaining stable operation in harsh or high-power environments.
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Is the JAN2N5339 suitable for audio amplification applications?
Indeed, with its high current capacity and reliable gain characteristics, this transistor is well-suited for medium power audio amplification stages requiring consistent signal amplification and low distortion.
How does the JAN2N5339 differ from typical commercial transistors?
It differs primarily in its military-grade certification, higher voltage and current ratings, and enhanced thermal performance, ensuring greater reliability and durability in demanding industrial or defense applications compared to standard commercial-grade transistors.
