JAN2N5303-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package ?C Motorola

JAN2N5303-Transistor Overview

The JAN2N5303 transistor is a high-voltage NPN bipolar junction transistor (BJT) designed for reliable switching and amplification in industrial and military-grade applications. With a collector-emitter voltage rating up to 200V and a collector current of 1A, it suits demanding circuits requiring robust performance and stability. This transistor offers dependable gain characteristics and low saturation voltage, making it ideal for controlling loads and interfacing with high-voltage signals. Trusted by engineers for its durability and consistent electrical parameters, the device is a valuable component in power management, signal processing, and control systems. For detailed sourcing and support, visit IC Manufacturer.

JAN2N5303-Transistor Technical Specifications

JAN2N5303-Transistor Key Features

• High voltage handling: Supports collector-emitter voltage up to 200V, enabling operation in high-voltage circuits without breakdown risk.
• Moderate current capability: Delivers up to 1A collector current, suitable for switching moderate loads and amplification tasks.
• Wide gain range: Current gain between 40 and 160 allows for flexible circuit design tailored to specific amplification needs.
• Robust metal TO-18 package: Enhances thermal dissipation and mechanical reliability in industrial environments.
• Low saturation voltage: Improves efficiency by reducing power losses during switching applications.
• Military and industrial grade: Meets stringent quality and reliability standards for critical applications.

Typical Applications

• Power amplification in audio and signal processing circuits requiring stable gain and reliability under high voltage stress.
• Switching devices in power supplies and motor control systems for industrial automation.
• Interface driver transistors in instrumentation and measurement equipment where accuracy and repeatability are critical.
• General-purpose amplification and switching in military and aerospace electronics demanding robust performance.

JAN2N5303-Transistor Advantages vs Typical Alternatives

This transistor offers a combination of high voltage tolerance and moderate current capacity, distinguishing it from lower voltage transistors typically used in general electronics. Its metal TO-18 package ensures superior heat dissipation and mechanical robustness compared to plastic-packaged alternatives. The wide gain range provides design flexibility, while its low saturation voltage enhances energy efficiency. These characteristics make it advantageous for industrial and military applications requiring reliable, high-performance switching and amplification.

JAN2N5303-Transistor Brand Info

The JAN prefix indicates that this transistor complies with military specifications, ensuring enhanced quality, reliability, and performance consistency. Typically manufactured under strict quality controls by established semiconductor producers, this device is part of a legacy lineup favored in aerospace, defense, and industrial sectors. It is distributed by authorized suppliers specializing in MIL-spec components, making it a preferred choice for engineers designing mission-critical systems. The TO-18 metal can package further confirms its military-grade categorization, designed to withstand harsh operating conditions.

FAQ

What does the JAN prefix signify for this transistor?

The JAN prefix indicates that the transistor meets military standards for quality, reliability, and performance. These standards ensure the device is tested for ruggedness, temperature range, and long-term stability, making it suitable for defense and aerospace applications.

Can this transistor be used in high-frequency applications?

With a typical transition frequency of around 30 MHz, this transistor is