JAN2N5237-Transistor by JAN | High-Power Switching NPN Transistor | TO-18 Package

  • This transistor amplifies electrical signals, enabling efficient control of current flow in various circuits.
  • Its voltage rating supports stable operation under typical load conditions, ensuring consistent performance.
  • The compact package reduces board space, facilitating integration into dense electronic assemblies.
  • Ideal for switching applications, it improves response time and overall device efficiency in power management.
  • Manufactured under strict quality controls, the component ensures long-term reliability in demanding environments.
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JAN2N5237-Transistor Overview

The JAN2N5237 transistor is a high-performance NPN bipolar junction transistor designed for switching and amplification in industrial and military-grade electronic applications. Featuring a robust design, it supports collector currents up to 800mA and a collector-emitter voltage rating of 40V, ensuring reliable operation under demanding conditions. Its complementary low-noise characteristics and stable gain make it suitable for precision analog circuits and high-frequency switching tasks. Manufactured to meet stringent military standards, this transistor offers dependable performance, making it an ideal choice for engineers and sourcing specialists requiring consistent quality from a trusted IC Manufacturer.

JAN2N5237-Transistor Key Features

  • High Collector Current Capacity: Supports up to 800mA, enabling robust load driving capabilities in power amplification and switching circuits.
  • Voltage Handling: Collector-emitter voltage up to 40V ensures the transistor operates safely under various voltage conditions, protecting downstream components.
  • Low Noise Performance: Ideal for audio and signal amplification where noise minimization is critical, enhancing overall signal integrity.
  • Military-Grade Quality: Built to meet JAN (Joint Army-Navy) specifications for enhanced reliability and durability in harsh environments.

JAN2N5237-Transistor Technical Specifications

Parameter Specification Unit
Transistor Type NPN Bipolar Junction
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 800 mA
Power Dissipation (PC) 1.0 W
DC Current Gain (hFE) 30 to 70
Transition Frequency (fT) 80 MHz
Operating Temperature Range -55 to +150 ??C

JAN2N5237-Transistor Advantages vs Typical Alternatives

This device offers superior reliability and performance compared to standard transistors, featuring a higher maximum collector current and voltage ratings. Its military-grade construction ensures enhanced durability in extreme temperature and environmental conditions, providing higher accuracy and stability in sensitive applications. The low noise factor and broad frequency response make it a versatile option for both switching and analog signal amplification tasks, outperforming typical commercial-grade alternatives in industrial technology contexts.

Typical Applications

  • Switching circuits in power management systems where a reliable, high-current transistor is essential for efficient load control and protection.
  • Signal amplification in audio equipment, benefiting from its low noise and stable gain characteristics to maintain signal fidelity.
  • Military and aerospace electronics requiring components compliant with rigorous standards for durability and thermal stability.
  • General-purpose amplification and switching in industrial automation and instrumentation systems, where consistent performance is critical.

JAN2N5237-Transistor Brand Info

This transistor is manufactured under the JAN (Joint Army-Navy) standard, signifying its compliance with military-grade quality and reliability requirements. The JAN2N5237 is produced by certified suppliers specializing in semiconductors designed for high-reliability applications. It adheres to strict testing and quality control processes, ensuring long-term stability and performance in both commercial and defense electronics markets.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current rating is 800mA, allowing the transistor to drive moderate power loads effectively without compromising reliability.

Can this transistor be used in high-frequency applications?

Yes, with a transition frequency of 80 MHz, it is suitable for moderate high-frequency applications, including RF amplification and switching circuits requiring fast response times.

What voltage ratings does the transistor support?

The device supports a collector-emitter voltage of 40V and a collector-base voltage of 60V, making it compatible with various voltage requirements in industrial and military systems.

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Is this transistor suitable for harsh environmental conditions?

Absolutely. It is built to JAN military standards with an operating temperature range from -55??C to +150??C, ensuring reliable performance in extreme environments.

What makes this transistor different from commercial-grade alternatives?

This transistor??s military-grade certification ensures stricter quality control, higher durability, and enhanced electrical performance, particularly in noise reduction, gain stability, and temperature tolerance compared to typical commercial-grade devices.

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