JAN2N5154U3-Transistor Overview
The JAN2N5154U3-Transistor is a high-performance NPN bipolar junction transistor designed for applications requiring reliable switching and amplification. This transistor features robust voltage and current handling capabilities, making it suitable for industrial control, signal processing, and power management circuits. Its military-grade JAN (Joint Army-Navy) specification ensures enhanced reliability and durability under harsh environmental conditions. Engineered for precision and long-term stability, this device delivers consistent performance in demanding operational settings. For detailed procurement and technical support, visit IC Manufacturer.
JAN2N5154U3-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vceo) | 80 V |
| Collector Current (Ic) | 1 A |
| Power Dissipation (Ptot) | 625 mW |
| DC Current Gain (hFE) | 40 to 160 (varies by test conditions) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Operating Temperature Range | -55??C to +125??C |
| Package Type | TO-18 Metal Can |
| Base-Emitter Voltage (Vbe) | 5 V (max) |
JAN2N5154U3-Transistor Key Features
- High voltage rating: Supports collector-emitter voltages up to 80 V, enabling robust performance in power switching applications.
- Wide operating temperature range: Reliable operation from -55??C to +125??C ensures suitability for harsh industrial and military environments.
- High-speed switching: Transition frequency of 100 MHz facilitates efficient signal processing and amplification in high-frequency circuits.
- Military-grade JAN specification: Guarantees superior quality, enhanced reliability, and consistency for demanding aerospace and defense applications.
Typical Applications
- Industrial control systems requiring dependable switching components capable of withstanding temperature extremes and electrical stress.
- Signal amplification stages in communication equipment where linearity and gain stability are critical.
- Power management circuits that benefit from the transistor??s high voltage and current capabilities.
- Military and aerospace electronics where compliance with JAN standards ensures mission-critical reliability.
JAN2N5154U3-Transistor Advantages vs Typical Alternatives
This transistor offers superior voltage and current handling compared to standard commercial devices, making it ideal for high-reliability and high-stress applications. Its military-grade JAN certification ensures enhanced durability and stringent quality control, outperforming generic alternatives in long-term stability and environmental tolerance. The combination of high transition frequency and broad operating temperature range translates to efficient performance in both analog and switching circuits, delivering precise control and dependable operation in critical industrial and defense systems.
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JAN2N5154U3-Transistor Brand Info
The JAN2N5154U3 transistor is manufactured under the JAN (Joint Army-Navy) standard, originally developed and standardized by the U.S. military to ensure ruggedness and reliability in electronic components. The device is produced by established semiconductor manufacturers specializing in military and industrial-grade transistors. These manufacturers adhere to strict testing and quality assurance protocols to meet the rigorous environmental and electrical requirements specified for JAN components. This product line is recognized for its long-standing legacy in aerospace, defense, and industrial applications where failure is not an option.
FAQ
What does the JAN designation mean for this transistor?
The JAN designation indicates that the transistor meets military standards for reliability, quality, and performance. These components are tested for durability under extreme temperature, vibration, and electrical stress, making them suitable for critical aerospace and defense applications.
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What are the key electrical limits of this transistor?
This device supports a maximum collector-emitter voltage of 80 V and a collector current up to 1 A. It dissipates up to 625 mW of power and operates reliably within a temperature
