JAN2N5153U3-Transistor NPN High Voltage Amplifier in TO-39 Metal Can Package

JAN2N5153U3-Transistor Overview

The JAN2N5153U3 transistor is a high-performance bipolar junction transistor (BJT) designed for switching and amplification applications in industrial and military-grade electronics. Featuring robust electrical characteristics and reliable operation under demanding conditions, this transistor ensures stable performance with low noise and high gain. Its hermetic package enhances durability in harsh environments, making it suitable for aerospace, defense, and precision instrumentation. Sourced from a trusted manufacturer, this device delivers consistent electrical parameters, supporting engineers and sourcing specialists in critical designs. For more details, visit IC Manufacturer.

JAN2N5153U3-Transistor Technical Specifications

JAN2N5153U3-Transistor Key Features

• High gain and frequency response: Delivers reliable amplification with a typical transition frequency of 100 MHz, enabling efficient signal processing in analog circuits.
• Wide operating temperature range: Supports operation from -55??C to +125??C, ensuring consistent performance in extreme environmental conditions.
• Compact hermetic TO-18 package: Provides excellent protection against moisture and contaminants, enhancing device longevity and reliability in harsh applications.
• Low power dissipation: With a maximum power rating of 300 mW, it offers efficient thermal management for compact designs.

Typical Applications

• Signal amplification in military and aerospace communication systems requiring high reliability and temperature tolerance.
• Switching circuits in industrial control equipment where stable operation under variable conditions is critical.
• Low-noise preamplifiers for precision instrumentation and sensor interfaces.
• General-purpose transistor applications in ruggedized electronics demanding hermetic packaging for environmental protection.

JAN2N5153U3-Transistor Advantages vs Typical Alternatives

This transistor offers superior environmental robustness due to its hermetic TO-18 packaging, which typical plastic-encapsulated alternatives lack. Its wide temperature range and stable gain characteristics provide engineers with enhanced reliability and precision. Compared to standard BJTs, it supports higher frequency operation with minimal noise, making it ideal for demanding industrial and military applications where accuracy and durability are paramount.

JAN2N5153U3-Transistor Brand Info

The JAN2N5153U3 is a military-grade transistor produced by manufacturers specializing in high-reliability semiconductor components. With roots tracing back to established defense industry standards, this transistor complies with stringent JAN (Joint Army-Navy) specifications, ensuring ruggedness and consistent performance in critical applications. The product is widely recognized for its quality and reliability in aerospace, defense, and industrial markets, supported by manufacturers known for precision-engineered semiconductor devices.

FAQ

What is the maximum collector current of this transistor?

The maximum collector current for this transistor is 100 mA. This rating ensures it can handle moderate current loads suitable for switching and amplification in various electronic circuits.

What type of package does the transistor use and why is it important?

This transistor employs a hermetic TO-18 metal can package. This packaging is crucial for protecting the device from moisture and contaminants, enhancing reliability in harsh environments such as aerospace and military applications.

Can this transistor operate in extreme temperature conditions?

Yes, the transistor supports an operating temperature range from -55??C to +125??C. This wide range makes it suitable for use in environments with significant temperature variations without performance degradation.

What is the typical gain (hFE) range for this device?

The DC current gain (hFE) typically ranges from 40