JAN2N5152L-Transistor PNP Amplifier Transistor in TO-39 Metal Can Package – Motorola

  • This transistor amplifies electrical signals, enabling efficient control in various electronic circuits.
  • High voltage tolerance ensures stable operation under demanding electrical conditions.
  • The compact package design offers board-space savings for dense circuit layouts.
  • Ideal for switching applications, it enhances performance in power management systems.
  • Manufactured with strict quality controls to provide consistent and reliable device operation.
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JAN2N5152L-Transistor Overview

The JAN2N5152L is a high-performance PNP bipolar junction transistor designed for reliable switching and amplification in industrial and military-grade applications. Featuring a robust voltage rating and stable gain characteristics, this transistor supports demanding environments where precision and durability are critical. Its complementary characteristics make it suitable for use in analog circuits, signal processing, and power regulation. The JAN2N5152L’s construction ensures consistent operation across temperature extremes and offers dependable performance for engineers and sourcing specialists seeking trusted components. For more detailed information, visit the IC Manufacturer.

JAN2N5152L-Transistor Technical Specifications

Parameter Specification Unit
Collector-Emitter Voltage (VCEO) -60 V
Collector-Base Voltage (VCBO) -60 V
Emitter-Base Voltage (VEBO) -5 V
Collector Current (IC) -600 mA
Power Dissipation (PD) 625 mW
DC Current Gain (hFE) 30 to 300 ?C
Transition Frequency (fT) 80 MHz
Operating Temperature Range -55 to +200 ??C

JAN2N5152L-Transistor Key Features

  • High Voltage Capability: Supports collector-emitter voltages up to -60 V, enabling operation in circuits requiring substantial voltage handling.
  • Wide Gain Range: DC current gain from 30 to 300 ensures flexible amplification options for varied circuit designs.
  • Robust Power Dissipation: Maximum power dissipation of 625 mW allows for efficient thermal management in compact designs.
  • High Transition Frequency: 80 MHz frequency response supports high-speed switching applications with stable performance.
  • Extended Temperature Range: Reliable operation from -55??C to +200??C makes it suitable for harsh and military environments.
  • Standardized Military JAN Marking: Guarantees quality and traceability for defense and aerospace applications.
  • Low Noise Performance: Suitable for low-level signal amplification without significant distortion.

Typical Applications

  • Switching and amplification in analog signal processing circuits, providing stable gain and reliable operation in sensitive instrumentation.
  • Military and aerospace electronic systems requiring components certified to JAN standards for durability and performance under stress.
  • Power regulation and driver stages in industrial control systems where voltage and current handling are critical.
  • General-purpose amplification in consumer and industrial devices that demand consistent transistor parameters over wide temperature variations.

JAN2N5152L-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage handling and power dissipation compared to common PNP alternatives, ensuring higher reliability in industrial and military applications. Its wide gain range and low noise characteristics provide enhanced signal integrity, while the extended temperature range supports operation in extreme environments. The JAN2N5152L??s standardized military-grade marking assures traceability and quality control, making it a preferred choice for engineers prioritizing performance and durability over generic transistors.

JAN2N5152L-Transistor Brand Info

The JAN2N5152L is part of the JAN (Joint Army-Navy) series, a designation denoting components built to stringent military standards for reliability and durability. These transistors are manufactured by established semiconductor suppliers specializing in high-reliability parts for defense and aerospace sectors. The JAN marking indicates compliance with strict quality control processes, including screening for temperature extremes, electrical characteristics, and physical robustness

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