JAN2N5151-Transistor Overview
The JAN2N5151 transistor is a high-performance silicon NPN bipolar junction transistor designed for robust switching and amplification applications. Featuring a collector-emitter voltage rating of 45V and a collector current capacity of up to 600mA, this device provides reliable operation in moderate power circuits. Its hFE (DC current gain) range of 40 to 100 ensures effective signal amplification, making it suitable for various industrial and commercial electronics. Manufactured to meet stringent military standards, it guarantees enhanced durability and consistent performance under demanding conditions. For precise semiconductor components, consult IC Manufacturer.
JAN2N5151-Transistor Key Features
- High voltage tolerance: With a collector-emitter voltage (VCEO) of 45V, it enables operation in circuits requiring moderate voltage handling capability.
- Reliable current handling: Supports continuous collector current up to 600mA, suitable for switching and amplification tasks without thermal overload.
- Wide DC gain range (hFE): A gain bandwidth between 40 and 100 ensures consistent amplification performance across various operating conditions.
- Military standard qualification: The JAN prefix certifies compliance with rigorous military quality and reliability standards, ensuring long-term stability.
JAN2N5151-Transistor Technical Specifications
| Parameter | Value | Unit | Description |
|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | 45 | V | Maximum voltage between collector and emitter |
| Collector-Base Voltage (VCBO) | 50 | V | Maximum voltage between collector and base |
| Emitter-Base Voltage (VEBO) | 5 | V | Maximum voltage between emitter and base |
| Collector Current (IC) | 600 | mA | Maximum continuous collector current |
| Power Dissipation (Ptot) | 625 | mW | Maximum total power dissipation |
| DC Current Gain (hFE) | 40-100 | ?? | Current gain at rated collector current |
| Transition Frequency (fT) | ?? | MHz | Not specified |
| Operating Temperature Range | -65 to +200 | ??C | Junction temperature limits |
JAN2N5151-Transistor Advantages vs Typical Alternatives
This transistor offers superior reliability and steady gain characteristics compared to typical commercial-grade transistors. Its military-specification construction ensures enhanced durability in harsh environments, making it a preferred choice for precision switching and amplification. The balanced combination of voltage rating and current capacity allows for versatile use while maintaining efficient power handling and thermal stability, setting it apart from less robust alternatives.
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Typical Applications
- Signal amplification in moderate power analog circuits, where reliable gain and voltage handling are critical for stable performance.
- Switching applications in industrial controls requiring dependable ON/OFF operation under varying loads.
- Driver stages for relay and solenoid actuation in automated systems.
- General-purpose transistor use in military and aerospace electronics demanding certified component reliability.
JAN2N5151-Transistor Brand Info
The JAN2N5151 transistor is a military-grade semiconductor device produced under the JAN (Joint Army-Navy) specification, ensuring compliance with strict quality and performance standards. This classification guarantees consistent manufacturing processes and thorough testing, delivering components that excel in durability and reliability for defense, aerospace, and high-reliability industrial applications. The product is recognized for its robust electrical characteristics and dependable operation in critical electronic systems.
FAQ
What is the maximum collector current for the JAN2N5151 transistor?
The maximum continuous collector current for this transistor is 600mA. This current rating allows it to handle moderate power loads in switching and amplification circuits without risking damage or thermal overload.
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What voltage limits should be observed when using this transistor?
The transistor supports a maximum collector-emitter voltage of 45V, collector-base voltage of 50V, and emitter-base voltage of 5V. Staying within these limits ensures safe operation and prevents breakdown during use.
How does the DC current gain (hFE) range affect circuit design?
The hFE range of 40 to 100 indicates the transistor??s amplification factor, which influences the input signal strength required for desired output. Designers can expect consistent gain performance within this range, allowing predictable transistor behavior.
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Is this transistor suitable for high-frequency applications?
The datasheet does not specify transition frequency (fT), suggesting this transistor is not optimized for high-frequency use. It is better suited for low to moderate frequency switching and amplification tasks.
What does the JAN prefix signify for this transistor?
The JAN prefix indicates the transistor complies with military standards for quality and reliability. This means it undergoes rigorous testing and manufacturing controls, making it ideal for applications requiring high dependability under harsh conditions.
