JAN2N5004-Transistor NPN Power Amplifier Transistor in TO-220 Package by ON Semiconductor

  • This transistor amplifies electrical signals, enabling efficient control in various electronic circuits.
  • High voltage tolerance supports robust performance under demanding electrical conditions.
  • Its compact package design allows for board-space savings in densely packed assemblies.
  • Ideal for switching applications in power regulation, enhancing overall system responsiveness.
  • Manufactured to meet industry standards, ensuring consistent reliability in long-term use.
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JAN2N5004-Transistor Overview

The JAN2N5004 is a high-voltage bipolar junction transistor (BJT) designed for robust switching and amplification applications in industrial electronics. Featuring a maximum collector-emitter voltage rating of 400V and a collector current capacity of 1.5A, this transistor is ideal for high-voltage circuits requiring reliable performance. Its rugged construction conforms to military standards, ensuring durability and long-term stability in demanding environments. The device offers a high DC current gain, making it suitable for precise amplification tasks. Engineers and sourcing specialists will find this transistor a dependable choice for power switching and control circuits. For more details, visit IC Manufacturer.

JAN2N5004-Transistor Technical Specifications

Parameter Value Units
Collector-Emitter Voltage (VCEO) 400 V
Collector-Base Voltage (VCBO) 600 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) 1.5 A
Power Dissipation (Ptot) 30 W
DC Current Gain (hFE) 20-70 ??
Transition Frequency (fT) ?? MHz
Operating Temperature Range -65 to +200 ??C

JAN2N5004-Transistor Key Features

  • High voltage capability: Supports up to 400V collector-emitter voltage, allowing use in high-voltage power switching circuits with ease and safety.
  • Robust current handling: 1.5A collector current rating ensures reliable operation under moderate load conditions, beneficial for industrial control applications.
  • Military-grade reliability: Designed to meet strict JAN (Joint Army-Navy) standards, this transistor offers enhanced durability and stable performance in harsh environments.
  • Wide temperature operation: Operates effectively from -65??C to +200??C, enabling deployment in extreme temperature applications without performance degradation.

Typical Applications

  • Switching regulators and power converters, where high voltage and reliable current switching are critical for efficient energy management.
  • Industrial motor control circuits requiring robust transistors capable of handling voltage spikes and continuous operation.
  • Amplification stages in high-voltage audio and RF equipment where high gain and voltage tolerance are necessary.
  • General-purpose high-voltage switching applications in aerospace and defense systems due to its military-grade qualification.

JAN2N5004-Transistor Advantages vs Typical Alternatives

This transistor provides superior high-voltage handling and military-grade reliability compared to standard commercial BJTs. Its robust current capacity and high power dissipation rating enable efficient switching in demanding applications. The wide operating temperature range ensures consistent performance where typical alternatives may fail, making it a preferred choice for engineers prioritizing durability and long-term stability.

JAN2N5004-Transistor Brand Info

The JAN2N5004 is a product typically manufactured under strict military specifications, often by established semiconductor suppliers specializing in defense-grade components. The ??JAN?? prefix indicates compliance with the Joint Army-Navy certification, signifying rigorous quality control and reliability standards. This transistor is sourced from reputable manufacturers who focus on delivering high-performance, durable components suitable for aerospace, defense, and industrial applications, ensuring compatibility with demanding operational environments.

FAQ

What does the ??JAN?? designation mean for this transistor?

The ??JAN?? prefix stands for Joint Army-Navy, indicating the transistor meets military standards for quality and reliability. This means it has been tested to withstand extreme environmental conditions and

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