JAN2N497S Transistor – NPN Power Amplifier Transistor in TO-3 Package by JAN

  • Acts as a switch or amplifier, enabling efficient control of electrical signals in circuits.
  • Features a voltage rating suitable for robust performance in medium-power applications.
  • Compact package design contributes to streamlined board layouts and saves valuable space.
  • Ideal for use in power regulation modules, enhancing overall system stability and response.
  • Manufactured to meet industry standards, ensuring consistent operation under varying conditions.
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JAN2N497S-Transistor Overview

The JAN2N497S is a high-performance NPN bipolar junction transistor designed for robust switching and amplification applications in industrial and military-grade electronic circuits. This transistor offers reliable operation under stringent conditions with a high collector-emitter voltage rating and substantial collector current capacity. Engineered for durability and precision, it ensures stable performance in demanding environments. Its rugged construction meets military specifications, making it ideal for aerospace, defense, and high-reliability industrial systems. For detailed specifications and procurement, please visit IC Manufacturer.

JAN2N497S-Transistor Technical Specifications

Parameter Value Unit
Transistor Type NPN
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 3 A
Power Dissipation (PD) 30 W
DC Current Gain (hFE) 40?C160
Transition Frequency (fT) 10 MHz
Operating Temperature Range -65 to +200 ??C
Package Type TO-3 Metal Can

JAN2N497S-Transistor Key Features

  • High voltage rating: With a collector-emitter voltage of 100V, it reliably handles demanding voltage environments, reducing the risk of breakdown in high-voltage circuits.
  • Robust current capacity: Supports up to 3A collector current, enabling efficient power switching and amplification in medium power applications.
  • Wide operating temperature range: Functionality from -65??C to +200??C ensures dependable performance in harsh thermal conditions typical of aerospace and military applications.
  • Military-grade construction: The TO-3 metal can package and JAN (Joint Army-Navy) certification guarantee ruggedness, superior heat dissipation, and long-term reliability.

Typical Applications

  • Power amplification in military radar and communication systems, where high voltage and current handling with reliability are critical.
  • Switching in industrial motor control circuits requiring durable and stable transistor operation under varying load conditions.
  • High-reliability aerospace electronics, including avionics power regulation and signal amplification in extreme temperature environments.
  • General-purpose amplifier and switch in high-power, high-temperature circuits demanding extended device longevity.

JAN2N497S-Transistor Advantages vs Typical Alternatives

This transistor stands out against typical alternatives due to its military-standard qualifications, which ensure enhanced durability and thermal performance. Its high voltage and current ratings combined with a broad operating temperature range provide superior operational reliability. Additionally, the metal TO-3 package offers excellent heat dissipation, reducing thermal stress and increasing device longevity. These factors make the device a preferred choice where sensitivity, power handling, and ruggedness are paramount.

JAN2N497S-Transistor Brand Info

The JAN2N497S transistor is a military-grade device originally developed under the Joint Army-Navy (JAN) standard, which denotes compliance with strict military specifications for reliability and performance. It is commonly manufactured by established semiconductor companies specializing in high-reliability components for aerospace and defense sectors. The JAN prefix indicates rigorous screening processes, ensuring the transistor meets stringent environmental and electrical criteria required by military and industrial users. This product is part of

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