JAN2N4449UB-Transistor Overview
The JAN2N4449UB transistor is a high-performance NPN bipolar junction transistor designed for switching and amplification applications in industrial and commercial electronics. Known for its reliable operation under demanding conditions, it features a wide voltage and current range suitable for various signal processing and power management tasks. This transistor offers robust gain characteristics and low noise, making it ideal for precision circuits. Its hermetically sealed TO-18 metal can package ensures enhanced durability and thermal stability. Engineers and sourcing specialists can rely on this component for consistent performance in complex circuit designs. For more detailed product information, visit IC Manufacturer.
JAN2N4449UB-Transistor Key Features
- High Voltage Handling: Supports a collector-emitter voltage (Vceo) up to 100 V, enabling use in high-voltage switching applications.
- Moderate Current Capacity: Collector current (Ic) rating of 600 mA allows effective control of moderate loads in amplification circuits.
- Low Noise Operation: Optimized for low noise figure, enhancing signal integrity in sensitive analog circuitry.
- Reliable Hermetic Packaging: TO-18 metal can package ensures environmental protection and thermal dissipation for improved reliability.
JAN2N4449UB-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (Vceo) | 100 | V |
| Collector-Base Voltage (Vcbo) | 100 | V |
| Emitter-Base Voltage (Vebo) | 6 | V |
| Collector Current (Ic) | 600 | mA |
| Power Dissipation (Pd) | 625 | mW |
| Transition Frequency (fT) | 300 | MHz |
| DC Current Gain (hFE) | 100 – 300 | ?? |
| Package Type | TO-18 | ?? |
JAN2N4449UB-Transistor Advantages vs Typical Alternatives
This transistor distinguishes itself through its elevated voltage ratings and stable gain, providing engineers with enhanced design flexibility. Its hermetic TO-18 package delivers superior thermal management and protection compared to plastic encapsulated alternatives, improving reliability in harsh environments. The combination of moderate current capability and low noise operation makes it a robust choice for precision amplification, outperforming many standard general-purpose transistors in critical industrial applications.
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Typical Applications
- Signal amplification in analog circuits, where low noise and stable gain are essential for accurate signal processing and maintaining signal integrity.
- Switching applications in power management systems requiring reliable operation at voltages up to 100 V and currents up to 600 mA.
- Driver stages for relay and solenoid control, benefiting from its moderate power dissipation and rugged packaging.
- Industrial instrumentation circuits needing temperature-stable operation and hermetic sealing for long-term durability.
JAN2N4449UB-Transistor Brand Info
This transistor is manufactured under rigorous quality standards to meet military and industrial reliability requirements. Packaged in a TO-18 metal can, it aligns with established semiconductor industry protocols for durable, hermetically sealed devices. The JAN prefix denotes compliance with Joint Army-Navy specifications, reflecting its suitability for high-reliability applications where long-term performance consistency is critical.
FAQ
What voltage levels can the JAN2N4449UB transistor safely handle?
The transistor supports a maximum collector-emitter voltage of 100 V, making it suitable for high-voltage switching and amplification tasks without risk of breakdown under specified conditions.
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How much current can this transistor conduct continuously?
It can handle continuous collector current up to 600 mA, enabling it to drive moderate loads such as relays or intermediate power stages in electronic circuits.
What are the benefits of the TO-18 package used for this transistor?
The TO-18 metal can package provides hermetic sealing, which protects the device from environmental contaminants, and offers superior thermal conduction compared to plastic packages, improving reliability and longevity.
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Is this transistor suitable for low-noise applications?
Yes, the device is designed to operate at low noise levels, making it ideal for sensitive analog and signal amplification circuits where signal clarity is critical.
What typical gain can be expected from this transistor?
The DC current gain (hFE) ranges from 100 to 300, providing adequate amplification capabilities across its operating range for various industrial and military applications.
