JAN2N4449UB/TR Overview
The JAN2N4449UB/TR is a high-performance bipolar junction transistor (BJT) designed for switching and amplification in demanding industrial and military-grade applications. This transistor features a rugged, hermetically sealed TO-18 metal can package, ensuring enhanced reliability under harsh environmental conditions. With a maximum collector current of 600mA and a collector-emitter voltage rating of 100V, it supports robust operation in medium power circuits. The device??s high current gain and fast switching capabilities make it ideal for precision analog amplification and switching tasks. Sourced from a trusted IC Manufacturer, this transistor meets strict quality and performance standards required by engineers and sourcing specialists.
JAN2N4449UB/TR Key Features
- High Voltage Handling: Supports up to 100V collector-emitter voltage, enabling use in circuits requiring durable voltage tolerance.
- Moderate Collector Current: Rated for 600mA collector current, allowing reliable switching and amplification in medium power applications.
- Enhanced Reliability: Hermetic TO-18 metal can packaging offers superior durability and thermal stability in challenging industrial environments.
- Consistent Gain Characteristics: Provides stable current gain (hFE), which is critical for predictable circuit performance and ease of design integration.
JAN2N4449UB/TR Technical Specifications
| Parameter | Specification | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 100 | V |
| Collector-Base Voltage (VCBO) | 100 | V |
| Emitter-Base Voltage (VEBO) | 6 | V |
| Collector Current (IC) | 600 | mA |
| Power Dissipation (Ptot) | 625 | mW |
| Transition Frequency (fT) | 300 | MHz |
| DC Current Gain (hFE) | 100?C300 | ?? |
| Operating Temperature | -55 to +200 | ??C |
JAN2N4449UB/TR Advantages vs Typical Alternatives
This transistor offers a unique combination of high voltage tolerance and moderate current handling in a compact, hermetically sealed TO-18 package. Compared to typical plastic-encapsulated alternatives, it delivers superior reliability and thermal performance for industrial and military applications. Its consistent gain and fast switching speed ensure accurate signal amplification and efficient power control, making it a preferred choice where stability and ruggedness are critical.
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Typical Applications
- Switching and Amplification in Industrial Control Systems: Ideal for robust transistor switching in harsh ambient conditions where reliability is paramount.
- Military and Aerospace Electronics: Designed to meet stringent military specifications for durability and performance under extreme temperature variations.
- Signal Amplification Circuits: Suitable for analog signal processing requiring stable current gain and low noise operation.
- Power Regulation Modules: Effective in moderate power switching circuits with high voltage demands.
JAN2N4449UB/TR Brand Info
This transistor is manufactured under the JAN (Joint Army-Navy) qualification standards, indicating compliance with rigorous military-grade quality and performance requirements. The 2N4449UB/TR designation reflects a hermetically sealed transistor designed for high reliability in industrial and defense applications. The product is produced by a reputable IC Manufacturer known for delivering components that meet strict environmental and operational standards, ensuring dependable performance in critical systems.
FAQ
What is the maximum collector current rating of this transistor?
The device supports a maximum collector current of 600mA, which enables it to handle moderate power switching and amplification tasks reliably in various industrial and military circuits.
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What package type is used for this transistor?
This transistor comes in a hermetically sealed TO-18 metal can package, offering enhanced durability, thermal stability, and moisture resistance compared to standard plastic packages.
What voltage levels can the transistor withstand?
It is rated to handle collector-emitter and collector-base voltages up to 100V, making it suitable for circuits with medium to high voltage requirements.
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Is this transistor suitable for high-frequency applications?
Yes, with a transition frequency (fT) of approximately 300MHz, this transistor supports moderate high-frequency switching and amplification applications.
What temperature range can this device operate within?
The transistor is specified to operate reliably from -55??C up to +200??C, making it well-suited for use in extreme environmental conditions often encountered in military and industrial settings.
