JAN2N4449-Transistor by JAN | High-Speed Switching Transistor | TO-92 Package

JAN2N4449-Transistor Overview

The JAN2N4449 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. Built to meet military standards, this transistor offers robust electrical characteristics and reliable operation under demanding conditions. Its high transition frequency and moderate power dissipation capabilities make it suitable for signal processing, low noise amplification, and switching circuits. Engineers and sourcing specialists appreciate the JAN2N4449 for its consistent gain and durability, ensuring stable performance in both commercial and industrial environments. For detailed procurement and technical support, visit IC Manufacturer.

JAN2N4449-Transistor Key Features

• High Transition Frequency: Ensures efficient operation in high-speed switching and RF amplification, improving overall circuit responsiveness.
• Military-Grade Reliability: Complies with JAN (Joint Army Navy) standards, making it ideal for defense and aerospace applications where durability is critical.
• Moderate Power Dissipation: Supports up to 625 mW, allowing flexible use in low to medium power amplification without excessive heat generation.
• Low Noise Operation: Enhances signal clarity in sensitive amplification tasks, contributing to improved signal-to-noise ratio in communication circuits.

JAN2N4449-Transistor Technical Specifications

JAN2N4449-Transistor Advantages vs Typical Alternatives

This transistor offers superior high-frequency response and enhanced reliability under rigorous conditions compared to standard BJTs. Its military-grade certification ensures consistent performance in challenging environments. The optimized gain range and low noise characteristics deliver better signal fidelity, making it a preferred choice over generic transistors for precision switching and amplification tasks in industrial and aerospace applications.

Typical Applications

• High-speed switching circuits where rapid response times are essential for system efficiency and timing accuracy.
• Low noise amplifier stages in communication devices, ensuring clear signal transmission and reception.
• Signal processing in industrial control systems requiring dependable transistor performance over extended periods.
• Military and aerospace electronics where compliance with JAN standards guarantees ruggedness and reliability.

JAN2N4449-Transistor Brand Info

The JAN2N4449 transistor is a military-grade device produced under strict quality controls to meet Joint Army Navy (JAN) specifications. Its design emphasizes durability, precision, and consistency, reflecting the high standards demanded by defense and aerospace sectors. This product line is recognized for its reliable electrical characteristics and suitability for critical applications requiring long-term operational stability and environmental resilience.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current for the device is 600 mA, allowing it to handle moderate power loads suitable for switching and amplification in various circuits.

Can this transistor operate at high frequencies?

Yes, it features a transition frequency of approximately 300 MHz, making it well-suited for high-speed switching and RF amplification applications.

What package type does the JAN2N4449 come in?

This transistor is housed in a TO-18 metal can package, which offers excellent thermal conductivity and mechanical protection in demanding environments.

Is this transistor suitable for military or aerospace use?

Yes, it complies with JAN (Joint Army Navy) standards, ensuring it meets rigorous military specifications for reliability and performance.

What is the typical gain range of this transistor?

The DC current gain (hFE) typically ranges from 100 to 300, providing balanced amplification suitable for general-purpose applications.