JAN2N4234L-Transistor Overview
The JAN2N4234L is a high-performance NPN bipolar junction transistor designed for industrial and military-grade applications requiring superior reliability and precise electrical characteristics. Featuring robust voltage and current handling capabilities, this transistor excels in switching and amplification roles within demanding circuits. Its hermetically sealed glass-metal construction ensures long-term stability under harsh environmental conditions. Ideal for engineers and sourcing specialists, the JAN2N4234L offers dependable performance backed by strict military standards, making it a trusted choice for critical system designs. For more detailed specifications and sourcing, visit IC Manufacturer.
JAN2N4234L-Transistor Key Features
- High Voltage Handling: Supports a collector-emitter voltage of up to 60 V, enabling operation in circuits requiring elevated voltage tolerance for reliable switching and amplification.
- Robust Current Capacity: Handles collector currents up to 1 A, allowing effective management of moderately high power loads without compromising transistor integrity.
- Low Saturation Voltage: Ensures efficient switching with minimal power loss, improving overall circuit efficiency and thermal management.
- Hermetic Glass-Metal Package: Provides superior environmental protection and mechanical durability, enhancing reliability in harsh industrial or military environments.
- High Gain Characteristics: With a DC current gain (hFE) typically ranging between 40 to 160, it supports stable amplification performance across its operating range.
- Temperature Stability: Designed to operate within a junction temperature range up to +200??C, suitable for high-temperature applications.
- Standardized Military-Grade Compliance: Manufactured according to JAN (Joint Army-Navy) standards, ensuring quality and performance consistency in critical applications.
JAN2N4234L-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector-Base Voltage (VCBO) | 60 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 1 A |
| DC Current Gain (hFE) | 40 to 160 |
| Power Dissipation (PD) | 1.0 W |
| Transition Frequency (fT) | 100 MHz (typical) |
| Operating Junction Temperature (TJ) | -65??C to +200??C |
| Package Type | Hermetic Glass-Metal TO-18 |
JAN2N4234L-Transistor Advantages vs Typical Alternatives
Compared to standard transistors, this device offers enhanced voltage and current ratings combined with military-grade reliability, ensuring consistent performance in critical applications. Its hermetic packaging minimizes environmental degradation, extending operational lifespan. The low saturation voltage and high gain improve power efficiency and signal amplification accuracy. These attributes make it a superior choice for engineers requiring stable, durable transistors beyond typical commercial-grade components.
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Typical Applications
- Military and aerospace control systems requiring reliable switching and amplification under extreme environmental conditions.
- Industrial automation circuits where high voltage and current handling are essential for motor control and power regulation.
- Precision amplification stages in instrumentation and sensor interfaces demanding stable gain and low noise.
- High-frequency switching circuits leveraging its transition frequency and low saturation voltage for efficient operation.
JAN2N4234L-Transistor Brand Info
The JAN2N4234L transistor is produced under stringent Joint Army-Navy (JAN) standards, ensuring exceptional quality and performance. This military-grade component is manufactured by established suppliers specializing in reliable, high-reliability semiconductor devices. It reflects decades of experience in providing critical components for defense and industrial sectors, maintaining consistent manufacturing processes that comply with rigorous testing and screening procedures.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current rating is 1 ampere, allowing it to handle moderately high power loads efficiently without compromising device stability or longevity.
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Can this transistor operate at high temperatures?
Yes, it supports an operating junction temperature range from -65??C up to +200??C, making it suitable for applications involving elevated thermal conditions.
What is the significance of the hermetic glass-metal package?
The hermetic glass-metal package provides excellent protection against moisture, dust, and mechanical stress, enhancing durability and reliability in harsh environments typical of military and industrial applications.
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Is the gain of the transistor stable across its operating range?
Yes, the DC current gain (hFE) typically ranges from 40 to 160, providing stable amplification performance throughout the transistor??s specified operating conditions.
What compliance standards does this transistor meet?
This transistor is compliant with JAN (Joint Army-Navy) military specifications, ensuring strict quality control and reliability suitable for defense and aerospace applications.
