JAN2N4150-Transistor NPN Amplifier Transistor in TO-18 Package by JAN Brand

  • This transistor amplifies electrical signals, enabling efficient control of current in electronic circuits.
  • It features a high voltage rating, ensuring stable operation under demanding electrical conditions.
  • The compact CBZ package minimizes board space, facilitating dense circuit designs and easier integration.
  • Ideal for switching applications, it improves performance and reliability in power management systems.
  • Manufactured to meet rigorous quality standards, it offers consistent performance and long-term durability.
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产品上方询盘

JAN2N4150-Transistor Overview

The JAN2N4150 transistor is a high-voltage NPN bipolar junction transistor designed for switching and amplification applications in industrial electronics. It offers a maximum collector-emitter voltage rating of 300 V and a collector current capability of up to 200 mA, making it suitable for medium-power applications requiring robust voltage tolerance. This transistor features a complementary balance of gain and breakdown voltage, supporting efficient signal control with reliable operation in demanding environments. Its military-grade JAN (Joint Army-Navy) classification ensures stringent quality and reliability standards, ideal for aerospace, defense, and industrial control systems. For detailed sourcing and technical support, visit IC Manufacturer.

JAN2N4150-Transistor Key Features

  • High Collector-Emitter Voltage: Rated at 300 V, it enables operation in circuits requiring elevated voltage handling without breakdown risk.
  • Moderate Collector Current Capacity: Supports up to 200 mA, suitable for moderate load switching and amplification tasks.
  • Stable Gain Characteristics: Provides a DC current gain (hFE) range of 15 to 70, ensuring consistent signal amplification performance.
  • Military-Grade Reliability: JAN qualification confirms compliance with rigorous environmental and electrical stress standards.

JAN2N4150-Transistor Technical Specifications

Parameter Value Unit
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 300 V
Collector-Base Voltage (VCBO) 300 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 200 mA
DC Current Gain (hFE) 15 to 70
Power Dissipation (Ptot) 625 mW
Transition Frequency (fT) 80 MHz
Package Type TO-18 Metal Can

JAN2N4150-Transistor Advantages vs Typical Alternatives

This transistor offers a superior voltage rating of 300 V combined with military-grade JAN certification, delivering enhanced reliability and durability compared to typical commercial transistors. Its balanced gain and current capacity make it a versatile choice for medium-power switching applications, while the robust metal can package enhances thermal performance and longevity. These attributes provide engineers with a dependable component suitable for demanding industrial and defense electronics.

Typical Applications

  • Switching and amplification circuits in industrial control systems, where high voltage tolerance and reliable performance are critical for long-term operation.
  • Military and aerospace electronics requiring components that meet strict quality and environmental standards.
  • Signal amplification in instrumentation and sensor interface circuits demanding consistent gain and fast switching.
  • Low to medium power driver stages in electronic assemblies where ruggedness and electrical stability are essential.

JAN2N4150-Transistor Brand Info

The JAN2N4150 transistor is part of the Joint Army-Navy (JAN) series, representing a product line manufactured under stringent military standards. This classification ensures enhanced reliability, quality control, and performance consistency. The transistor is typically produced by reputable semiconductor manufacturers specializing in military and industrial-grade electronic components, trusted for applications necessitating high durability and long-term stability.

FAQ

What is the maximum collector current rating for this transistor?

The transistor supports a maximum collector current of 200 mA, making it suitable for medium-power switching and amplification applications without exceeding thermal or electrical limits.

What voltage levels can the transistor safely handle?

It can withstand up to 300 V between collector and emitter, as well as collector and base, ensuring high-voltage operation capability in demanding circuits.

What package type is used for the JAN2N4150 transistor?

This device comes in a TO-18 metal can package, which provides excellent thermal dissipation and mechanical protection, suitable for rugged environments.

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产品中间询盘

What does the JAN designation indicate about this transistor?

The JAN prefix signifies military-grade qualification, ensuring the transistor meets stringent reliability, performance, and environmental standards required for defense and aerospace applications.

Can this transistor be used for high-frequency applications?

With a transition frequency (fT) of 80 MHz, it is capable of functioning effectively in moderate frequency amplification and switching circuits, suitable for many industrial signal processing tasks.

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