JAN2N4033UB-Transistor by JAN – High-Power NPN Transistor in TO-3 Package

  • This transistor controls current flow efficiently, enabling precise switching in electronic circuits.
  • It offers low noise operation, which is critical for maintaining signal integrity in sensitive applications.
  • The compact package design allows for board-space savings in densely populated circuit layouts.
  • Ideal for amplification tasks in audio devices, improving sound clarity and performance.
  • Manufactured to meet standard reliability tests, ensuring consistent operation under various conditions.
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JAN2N4033UB-Transistor Overview

The JAN2N4033UB is a high-performance NPN bipolar junction transistor (BJT) designed for switching and amplification applications in industrial and military-grade electronics. Featuring a robust construction for enhanced reliability, it operates efficiently under demanding conditions with a maximum collector-emitter voltage of 80V and a continuous collector current rating of 8A. This transistor supports high gain and fast switching speeds, making it ideal for power regulation, signal amplification, and driver circuits. Engineered to meet stringent JAN (Joint Army-Navy) standards, it ensures consistent performance and durability. For more detailed product insights, visit IC Manufacturer.

JAN2N4033UB-Transistor Key Features

  • High Collector Current Capacity: Supports up to 8A continuous current, enabling robust power handling for demanding circuits.
  • Moderate Collector-Emitter Voltage: Rated at 80V, suitable for a wide range of medium-voltage applications.
  • Superior Gain Characteristics: Provides reliable amplification with a DC current gain (hFE) range optimized for switching and linear amplification.
  • Military-Grade Reliability: Complies with JAN specifications ensuring durability in harsh environments and extended operational life.
  • Fast Switching Speed: Enables efficient operation in high-frequency circuits, reducing power loss and improving system responsiveness.
  • Robust Package Design: TO-220 or equivalent packaging supports effective heat dissipation, enhancing thermal performance.
  • Low Saturation Voltage: Minimizes power dissipation and improves overall circuit efficiency during switching.

JAN2N4033UB-Transistor Technical Specifications

Parameter Value Units
Collector-Emitter Voltage (VCEO) 80 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Continuous Collector Current (IC) 8 A
Peak Collector Current (ICM) 10 A
Power Dissipation (Pc) 100 W
DC Current Gain (hFE) 40 to 250 (typical range)
Transition Frequency (fT) 4 MHz
Operating Junction Temperature (Tj) -65 to +200 ??C
Storage Temperature Range (Tstg) -65 to +200 ??C

JAN2N4033UB-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced power handling and switching speed compared to standard NPN BJTs, making it a superior choice for industrial and military applications. Its high current rating and voltage tolerance improve circuit robustness, while the JAN certification guarantees reliability under extreme conditions. The combination of low saturation voltage and effective thermal design further optimizes efficiency and longevity, giving it a clear advantage over typical alternatives in demanding environments.

Typical Applications

  • Power amplification circuits where reliable high current handling is essential, such as motor drivers and audio amplifiers in industrial systems.
  • Switching regulators and power supply circuits requiring fast switching with minimal losses.
  • Signal amplification in communication and control systems operating under variable environmental conditions.
  • Military and aerospace electronics that demand rugged components adhering to strict quality and performance standards.

JAN2N4033UB-Transistor Brand Info

The JAN2N4033UB transistor is produced under the JAN (Joint Army-Navy) standard, signifying its military-grade quality and reliability. This designation ensures the device meets rigorous testing criteria for durability and performance in harsh environments. The transistor is manufactured by a reputable supplier specializing in industrial and defense semiconductor components, delivering consistent quality and traceability. Its robust design and verified specifications make it a trusted choice for engineers and sourcing specialists seeking dependable high-power switching and amplification solutions.

FAQ

What is the maximum collector current rating for this transistor?

The device supports a continuous collector current up to 8A, with the ability to handle peak currents up to 10A, making it suitable for high-power switching and amplification tasks.

What voltage levels can this transistor safely operate at?

It features a maximum collector-emitter voltage of 80V and a collector-base voltage of 100V, allowing it to function reliably in medium-voltage industrial and military applications.

How does the JAN certification affect the transistor’s reliability?

JAN certification ensures the transistor meets strict military standards, including rigorous environmental and electrical testing, guaranteeing enhanced durability and dependable performance in extreme conditions.

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产品中间询盘

What package type does this transistor use and how does it affect thermal management?

The transistor typically comes in a TO-220 style package, which facilitates efficient heat dissipation through its metal tab, improving thermal performance during high-power operation.

Can this transistor be used in high-frequency switching applications?

Yes, with a transition frequency around 4 MHz, it supports moderate high-frequency switching, making it suitable for power regulation and signal amplification where fast response is needed.

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