JAN2N3999-Transistor Overview
The JAN2N3999 is a high-voltage, high-power NPN bipolar junction transistor designed for robust industrial and military applications. It offers reliable switching and amplification capabilities with a collector-emitter voltage rating of 100V and a collector current capacity of 8A. This transistor is known for its rugged construction, ensuring stable operation under demanding conditions such as high temperature and voltage stress. Its low saturation voltage and fast switching speeds make it suitable for power amplification and switching circuits. Sourcing engineers and design specialists can rely on this component for improved circuit efficiency and durability. More information is available at IC Manufacturer.
JAN2N3999-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 100 | V |
| Collector-Base Voltage (VCBO) | 100 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 8 | A |
| Power Dissipation (PD) | 75 | W |
| DC Current Gain (hFE) | 40?C160 | (typical range) |
| Transition Frequency (fT) | 30 | MHz |
| Operating Junction Temperature (TJ) | -65 to +200 | ??C |
JAN2N3999-Transistor Key Features
- High voltage capability: Supports up to 100V collector-emitter voltage, enabling operation in demanding high-voltage circuits.
- Robust collector current rating: Handles continuous collector currents up to 8A, providing strong switching and amplification power.
- Wide operating temperature range: Reliable function from -65??C to +200??C ensures suitability for harsh environments and military-grade applications.
- Low saturation voltage: Minimizes power loss during conduction, improving overall efficiency in power amplification roles.
- Fast switching speed: Transition frequency around 30 MHz supports efficient switching in high-frequency circuits.
- High power dissipation capacity: Can dissipate up to 75W, allowing for high power handling without degradation.
- Military automotive JAN certification: Guarantees rigorous quality and reliability standards for critical applications.
Typical Applications
- Power amplification in audio and RF circuits, where high voltage and current handling are essential for robust signal output.
- Switching regulators and power supply circuits requiring reliable switching performance under heavy load conditions.
- Motor control circuits in industrial automation, benefiting from the transistor??s high current and voltage ratings.
- Military and aerospace electronic systems demanding components with rigorous performance and reliability standards.
JAN2N3999-Transistor Advantages vs Typical Alternatives
This transistor offers superior voltage and current ratings compared to standard small-signal transistors, enhancing its suitability for high-power and high-voltage applications. Its ruggedized JAN certification ensures dependable operation in extreme environments where reliability is critical. Additionally, the device??s low saturation voltage and high power dissipation improve energy efficiency and thermal management compared to typical alternatives, making it a preferred choice in industrial and military power amplification and switching solutions.
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JAN2N3999-Transistor Brand Info
The JAN2N3999 is a military-grade transistor originally specified under the Joint Army-Navy (JAN) standard to meet stringent performance and reliability requirements. Manufactured by established semiconductor suppliers specializing in robust and high-reliability components, this transistor is commonly sourced from reputable IC manufacturers who comply with military and industrial quality control protocols. Its production
