JAN2N3998-Transistor NPN High-Speed Switching Transistor in TO-92 Package by ON Semiconductor

JAN2N3998-Transistor Overview

The JAN2N3998 transistor is a high-performance NPN bipolar junction transistor designed for demanding electronic applications requiring reliable switching and amplification capabilities. It offers a maximum collector-emitter voltage of 100V and can handle collector currents up to 0.8A, making it suitable for medium-power tasks. With a DC current gain (hFE) ranging from 40 to 320, it supports efficient signal amplification. The device??s robust construction aligns with military standards, ensuring durability in harsh environments. Engineers and sourcing specialists benefit from its consistent electrical characteristics and compatibility with various circuit designs, available through IC Manufacturer.

JAN2N3998-Transistor Technical Specifications

JAN2N3998-Transistor Key Features

• High Voltage Capability: Supports up to 100V collector-emitter voltage, enabling use in circuits with significant voltage swings without breakdown risk.
• Robust Current Handling: Collector current rating up to 0.8A ensures reliable performance in medium-power amplification and switching.
• Wide DC Gain Range: Offers hFE values from 40 to 320, providing design flexibility for various amplification needs and signal control.
• Military-Grade Construction: Built to meet stringent MIL-STD-202 standards, ensuring durability and reliability in extreme environmental conditions.

Typical Applications

• Signal amplification in communication equipment requiring stable gain and low noise over a wide frequency range.
• Switching devices in industrial control systems where reliable current handling is critical.
• Driver stages in audio amplifiers benefiting from high gain and low distortion.
• Military and aerospace electronics demanding ruggedized components with extended temperature tolerance.

JAN2N3998-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings compared to similar NPN devices, enhancing reliability under stress. Its broad gain range facilitates precise circuit tuning, and the military-grade package ensures long-term stability in harsh environments. These advantages make it a preferred choice over standard commercial transistors when robustness and consistent performance are critical.

JAN2N3998-Transistor Brand Info

The JAN2N3998 is part of a series of transistors originally specified under military standards and commonly manufactured by established semiconductor companies specializing in high-reliability components. The “JAN” prefix indicates adherence to Joint Army-Navy specifications, reflecting stringent quality and performance requirements. This transistor is widely respected for its rugged construction and stable electrical characteristics, making it a dependable option in both legacy and modern industrial electronics applications.

FAQ

What are the primary electrical limits of this transistor?

The transistor supports a maximum collector-emitter voltage of 100V and a collector current rating of 0.8A. Its power dissipation is rated at 1.0W, and it can operate safely within these limits to ensure long-term reliability.

How does the DC current gain range affect circuit design?

The wide hFE range from 40 to 320 allows engineers to select devices that meet specific gain requirements for their applications, enabling flexibility in amplification levels and improving signal integrity across different circuit topologies.

Is this device suitable for high-frequency applications?

Yes, with a typical transition frequency of approximately 100 MHz, this transistor can be effectively used in moderate high-frequency circuits, such as RF amplifiers and signal processing stages.