JAN2N3996-Transistor High-Power NPN Amplifier Transistor in TO-3 Package by JAN

  • This transistor amplifies electrical signals, enabling effective control of current flow in electronic circuits.
  • Designed with a high voltage rating, it ensures stable performance under demanding electrical conditions.
  • The compact package minimizes board space, facilitating integration into dense circuit layouts.
  • Ideal for switching applications in power management, it enhances device efficiency and response time.
  • Manufactured to meet strict quality standards, it offers dependable operation over extended use.
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JAN2N3996-Transistor Overview

The JAN2N3996 transistor is a high-power NPN bipolar junction transistor (BJT) designed for robust switching and amplification applications. With a collector current rating of up to 10A and a collector-emitter voltage of 100V, it offers reliable performance in demanding industrial and military-grade environments. Known for its high gain and fast switching capability, this transistor is suitable for power regulation and audio amplifier circuits. It is manufactured to meet stringent military standards, ensuring durability and consistent operation under harsh conditions. This device is a dependable choice for engineers seeking a rugged transistor solution. For more detailed information, visit IC Manufacturer.

JAN2N3996-Transistor Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 10 A (continuous)
Power Dissipation (PD) 115 W
DC Current Gain (hFE) 40 to 160 (at IC = 4A, VCE = 4V)
Transition Frequency (fT) 5 MHz (typical)
Package TO-3 Metal Can

JAN2N3996-Transistor Key Features

  • High Collector Current Capacity: Supports continuous currents up to 10A, enabling robust power handling in demanding circuits.
  • Wide Voltage Ratings: Collector-emitter and collector-base voltages up to 100V provide flexibility in high-voltage switching applications.
  • Military-Grade Reliability: Manufactured to JAN (Joint Army-Navy) standards, ensuring stable operation under extreme environmental conditions.
  • High Power Dissipation: With a maximum power rating of 115W, it is ideal for high-power linear and switching applications without thermal compromise.

Typical Applications

  • Power amplification in audio and RF circuits requiring high gain and current handling capabilities.
  • High-voltage switching for industrial motor control and power regulation systems.
  • Military and aerospace electronic equipment demanding rugged and reliable transistor components.
  • General-purpose amplification and switching in harsh environmental conditions where robustness is critical.

JAN2N3996-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced current and voltage handling compared to many standard BJTs, making it well-suited for high-power and high-voltage applications. Its military-grade certification ensures superior reliability and durability, a key advantage in critical industrial and defense systems. Additionally, its robust TO-3 package facilitates effective heat dissipation, increasing operational stability and lifespan versus typical plastic-encapsulated alternatives.

JAN2N3996-Transistor Brand Info

The JAN2N3996 is a product originally specified under the Joint Army-Navy (JAN) military standards, typically sourced from manufacturers specializing in high-reliability semiconductor devices for defense and aerospace markets. This transistor is commonly produced by established semiconductor companies with a history of supplying rugged, mission-critical components compliant with MIL-STD-750 for quality and reliability. It is recognized for its stringent screening processes and long-term availability in military and industrial supply chains.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current for this device is 10 amperes, making it suitable for applications requiring high current flow without compromising performance or reliability.

Can this transistor operate at high voltages?

Yes, it has a collector-emitter voltage rating of 100

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