JAN2N3879-Transistor Overview
The JAN2N3879 is a high-performance NPN bipolar junction transistor designed for military and industrial applications requiring robust switching and amplification capabilities. This transistor offers reliable operation under stringent environmental conditions, making it suitable for high-reliability electronics. With a maximum collector-base voltage of 100 V and a collector current rating up to 5 A, it supports demanding power handling needs. The device??s complementary gain and frequency response make it ideal for power amplifier stages and switching circuits. Sourced from a trusted IC Manufacturer, the JAN2N3879 delivers consistent electrical characteristics and long-term stability, essential for critical system designs.
JAN2N3879-Transistor Key Features
- High Voltage Capability: Supports voltages up to 100 V, ensuring robust performance in high-voltage switching and amplification applications.
- High Collector Current: Rated for continuous collector currents up to 5 A, allowing effective handling of substantial load currents without degradation.
- Low Saturation Voltage: Minimizes power losses and enhances efficiency in switching circuits, contributing to improved thermal management.
- Wide Operating Temperature Range: Designed to operate reliably in harsh environments, supporting military-grade temperature specifications for enhanced durability.
JAN2N3879-Transistor Technical Specifications
| Parameter | Value | Units |
|---|---|---|
| Collector-Base Voltage (VCBO) | 100 | V |
| Collector-Emitter Voltage (VCEO) | 80 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 5 | A |
| Total Power Dissipation (Ptot) | 30 | W |
| Transition Frequency (fT) | 5 | MHz |
| DC Current Gain (hFE) | 40 – 160 | ?? |
| Operating Junction Temperature (TJ) | -65 to +200 | ??C |
JAN2N3879-Transistor Advantages vs Typical Alternatives
This transistor delivers a balanced combination of high voltage and current ratings with dependable gain characteristics, providing superior performance in power switching compared to typical low-power transistors. Its rugged construction and extended temperature range ensure enhanced reliability in industrial and military environments, reducing failure rates and maintenance costs. The low saturation voltage improves system efficiency, making it a preferred choice for demanding amplifier and control circuits over less robust alternatives.
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Typical Applications
- Power Amplifier Stages: Utilized in audio and radio frequency power amplification where high current and voltage handling improve signal strength and fidelity.
- Switching Regulators: Effective in DC-DC converter circuits requiring efficient switching with minimal power loss.
- Motor Control Circuits: Suitable for driving medium-power motors with precise switching control and thermal stability.
- Industrial Automation: Applied in control systems that demand reliable transistor operation under harsh environmental and electrical stresses.
JAN2N3879-Transistor Brand Info
The JAN2N3879 is part of a legacy series of military-grade transistors recognized for their stringent quality and consistency standards. Manufactured under established processes, it adheres to rigorous testing to meet defined performance criteria for high-reliability applications. This product is widely respected within defense and industrial sectors for its proven durability, electrical stability, and compatibility with a broad range of electronic designs requiring robust switching and amplification solutions.
FAQ
What is the maximum collector current rating for this transistor?
The maximum continuous collector current for this transistor is 5 A, allowing it to handle moderate to high load currents in various power control and amplification applications without compromising performance.
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Can this transistor operate in high-temperature environments?
Yes, it is rated for operation over a wide junction temperature range from -65??C to +200??C, making it suitable for use in harsh industrial and military settings where temperature extremes are common.
What are the voltage limitations of this device?
The transistor supports a collector-base voltage (VCBO) up to 100 V and a collector-emitter voltage (VCEO) up to 80 V, providing flexibility for use in high-voltage switching and amplifier circuits.
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Is the transistor suitable for high-frequency applications?
With a transition frequency (fT) of around 5 MHz, it can be used in moderate frequency applications such as audio and RF power amplifiers, although it is not intended for ultra-high frequency or microwave use.
How does the device??s gain vary across its operating range?
The DC current gain (hFE) typically ranges from 40 to 160, depending on operating conditions and collector current, providing consistent amplification performance across the transistor??s specified operating points.
