JAN2N3868-Transistor by JAN | High-Power NPN Transistor | TO-39 Metal Package

  • Amplifies electronic signals efficiently, enabling clearer sound and stronger signal transmission in circuits.
  • High frequency response supports fast switching, essential for high-speed communication devices.
  • Compact package design allows easy integration into densely populated circuit boards, saving valuable space.
  • Ideal for RF amplification tasks, enhancing performance in communication equipment and signal processing.
  • Manufactured to meet industry standards, ensuring consistent performance and operational reliability over time.
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JAN2N3868-Transistor Overview

The JAN2N3868 is a high-performance NPN bipolar junction transistor designed for medium power and high-speed switching applications. Known for its robust current handling and voltage capabilities, it offers reliable operation in amplifier circuits, switching regulators, and general-purpose amplification. With a collector current rating of up to 0.5A and a collector-emitter voltage of 30V, this transistor is ideal for industrial and military-grade electronics requiring consistent performance under demanding conditions. The device??s low saturation voltage and high gain make it a versatile choice for engineers and sourcing specialists focused on efficiency and durability. Available through IC Manufacturer, it supports a wide range of applications requiring rugged and dependable transistor solutions.

JAN2N3868-Transistor Key Features

  • High collector current capability: Supports up to 0.5A, enabling robust operation in power amplification and switching circuits.
  • Collector-emitter voltage rating of 30V: Ensures reliable performance in moderate voltage environments, protecting against breakdown.
  • Low saturation voltage: Enhances efficiency by minimizing power loss during switching, which is critical for power-sensitive industrial applications.
  • High current gain (hFE): Typically ranging from 40 to 160, providing excellent amplification and sensitivity for signal processing tasks.

JAN2N3868-Transistor Technical Specifications

Parameter Value Units
Collector-Emitter Voltage (VCEO) 30 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 0.5 A
Power Dissipation (Ptot) 12.5 W
DC Current Gain (hFE) 40 to 160 ?C
Transition Frequency (fT) 100 MHz
Junction Temperature (Tj) 200 ??C

JAN2N3868-Transistor Advantages vs Typical Alternatives

This transistor offers a superior balance of current capability, voltage tolerance, and gain compared to many general-purpose NPN transistors. Its low saturation voltage improves switching efficiency, making it more power-effective in amplifier and switching applications. The robust maximum junction temperature enhances reliability under elevated thermal conditions, while its military-grade JAN (Joint Army-Navy) qualification ensures a level of quality and consistency not found in standard commercial transistors. These factors make it advantageous for engineers seeking dependable, long-term performance in critical industrial environments.

Typical Applications

  • Medium power audio amplifiers requiring high gain and low distortion, where efficient current handling is essential for audio fidelity and device longevity.
  • Switching circuits in power supplies and DC-DC converters, leveraging its fast switching speed and low saturation voltage to enhance overall system efficiency.
  • Driver stages for relay and motor control circuits, benefiting from its robust current capability and voltage ratings for reliable operation.
  • General-purpose amplification in industrial control systems, where stable performance and thermal endurance contribute to system reliability.

JAN2N3868-Transistor Brand Info

The JAN2N3868 is part of the Joint Army-Navy (JAN) series, indicating its adherence to military-grade manufacturing and testing standards. This classification ensures stringent quality control, high reliability, and enhanced environmental robustness. Designed for rigorous industrial and defense applications, the transistor is produced under strict guidelines to meet demanding operational requirements. Its availability through leading semiconductor suppliers highlights its consistent performance and trusted reputation among engineers and sourcing specialists requiring dependable components for mission-critical systems.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current for this transistor is 0.5A (500 milliamps). This rating allows it to handle moderate power levels in amplification and switching applications without risk of damage or degradation, provided proper thermal management is applied.

Can this transistor be used in high-frequency applications?

Yes, with a transition frequency (fT) of approximately 100 MHz, it is suitable for many high-frequency applications including RF amplification and fast switching circuits, although it is primarily optimized for medium power and audio frequency ranges.

What are the voltage limits for safe operation?

The key voltage ratings include a collector-emitter voltage (VCEO) of 30V, a collector-base voltage (VCBO) of 60V, and an emitter-base voltage (VEBO) of 5V. Staying within these limits is crucial to prevent breakdown and ensure reliable transistor operation.

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How does the JAN2N3868 compare to commercial transistor equivalents?

The JAN2N3868 meets military JAN standards, offering enhanced reliability and thermal stability compared to typical commercial transistors. This makes it preferable for applications demanding consistent performance under harsh environmental or extended operational conditions.

What package type is used for this transistor?

This transistor is typically housed in a TO-18 metal can package, which provides excellent thermal dissipation and mechanical protection, making it suitable for rugged industrial and military environments.

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