The JAN2N3867U4 is a high-performance NPN bipolar junction transistor designed for medium-power amplification and switching applications. Its robust construction ensures reliable operation under demanding conditions, making it suitable for industrial and military-grade electronics. The device features a maximum collector-emitter voltage of 60 V and a collector current rating of up to 2 A, supporting efficient power handling. Its complementary characteristics enable seamless integration into analog circuits requiring high gain and fast switching speeds. Delivered in a TO-39 metal can package, this transistor provides excellent thermal dissipation and mechanical durability. For detailed sourcing and technical support, visit the IC Manufacturer website.
JAN2N3867U4-Transistor Technical Specifications
Parameter
Specification
Unit
Collector-Emitter Voltage (VCEO)
60
V
Collector-Base Voltage (VCBO)
80
V
Emitter-Base Voltage (VEBO)
7
V
Collector Current (IC)
2
A
Power Dissipation (Ptot)
30
W
DC Current Gain (hFE)
40 to 160
(typical range)
Transition Frequency (fT)
100
MHz
Package Type
TO-39 Metal Can
?C
JAN2N3867U4-Transistor Key Features
High Voltage Handling: Supports collector-emitter voltages up to 60 V, enabling use in a variety of medium-voltage circuits requiring reliable switching.
Robust Current Capacity: Rated for collector currents up to 2 A, suitable for moderate power amplification and load driving applications.
Wide DC Gain Range: Offers a flexible hFE range from 40 to 160, allowing designers to optimize gain for different circuit requirements.
Metal Can Packaging: TO-39 package provides superior thermal dissipation and mechanical stability compared to plastic alternatives, enhancing reliability in harsh environments.
Typical Applications
Audio amplification circuits requiring medium-power transistors with stable gain and low distortion in industrial or military systems.
Switching regulators and DC-DC converters where fast switching and reliable current handling are essential.
Signal amplification in instrumentation and control systems demanding robust transistor performance under variable load conditions.
General-purpose switching applications in automotive and aerospace electronics, where durability and consistent behavior are critical.
JAN2N3867U4-Transistor Advantages vs Typical Alternatives
This transistor provides a balanced combination of voltage rating, current capacity, and gain that meets the needs of medium-power amplification and switching tasks. Compared to other general-purpose transistors, it offers superior thermal performance thanks to its TO-39 metal can packaging. This results in enhanced reliability and longer operational life, particularly in industrial and military environments where temperature extremes and mechanical stress are common. Its broad gain range also offers flexibility for engineers optimizing circuit performance.
The JAN2N3867U4 is a military-grade transistor variant originally manufactured under the Joint Army-Navy (JAN) specification, ensuring compliance with stringent military quality and reliability standards. Typically produced by established semiconductor manufacturers with expertise in defense and industrial components, this transistor is designed for high-reliability applications. The JAN prefix indicates a product that meets rigorous testing for temperature extremes, vibration resistance, and consistent electrical performance, making it a trusted choice for mission-critical systems.
